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Comparison of Pd/Inp and Pd/GaAs Thin-Film Systems for Device Metallization

Published online by Cambridge University Press:  25 February 2011

R. Caron-Popowich ,
J. Washburn ,
T. Sands  and
E.D. Marshall
R. Caron-Popowich
Affiliation:
Materials and Chemical Sciences Division, Lawrence Berkeley Laboratory, Berkeley, CA 94720
J. Washburn
Affiliation:
Materials and Chemical Sciences Division, Lawrence Berkeley Laboratory, Berkeley, CA 94720
T. Sands
Affiliation:
Bellcore, 331 Newman Springs Rd., Red Bank, NJ 07701
E.D. Marshall
Affiliation:
Department of Electrical Engineering and Computer Sciences, University of California at San Diego, La Jolla, CA 92093
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Abstract

Results of the interaction of 40-nm Pd films on chemically cleaned InP substrates at temperatures from 175 to 650°C are reported. Comparisons are made with previous results from studies of Pd thin-films on GaAs. For both systems, the reaction began upon deposition of the metal. Ternary phases were found after annealing at temperatures up to 250°C. At 450°C and higher, the PdIn or PdGa phase was dominant because of loss of volatile P or As. Possibilities for making ohmic contacts based on these systems are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 148: Symposium D – Chemistry and Defects in Semiconductor Heterostructures , 1989 , 53
Copyright
Copyright © Materials Research Society 1989

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References

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