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A Comparison of Lattice-Matched GaInNAs and Metamorphic InGaAs Photodetector Devices

Published online by Cambridge University Press:  01 February 2011

David B. Jackrel ,
Homan B. Yuen ,
Seth R. Bank ,
Mark A. Wisteyy ,
Xiaojun Yu ,
Junxian Fu ,
Zhilong Rao  and
James S. Harris Jr
Homan B. Yuen
Affiliation:
Stanford University, Solid State Research Lab, 420 Via Palou, Stanford, CA 94305-4070, U.S.A.
Seth R. Bank
Affiliation:
Stanford University, Solid State Research Lab, 420 Via Palou, Stanford, CA 94305-4070, U.S.A.
Mark A. Wisteyy
Affiliation:
Stanford University, Solid State Research Lab, 420 Via Palou, Stanford, CA 94305-4070, U.S.A.
Xiaojun Yu
Affiliation:
Stanford University, Solid State Research Lab, 420 Via Palou, Stanford, CA 94305-4070, U.S.A.
Junxian Fu
Affiliation:
Stanford University, Solid State Research Lab, 420 Via Palou, Stanford, CA 94305-4070, U.S.A.
Zhilong Rao
Affiliation:
Stanford University, Solid State Research Lab, 420 Via Palou, Stanford, CA 94305-4070, U.S.A.
James S. Harris Jr
Affiliation:
Stanford University, Solid State Research Lab, 420 Via Palou, Stanford, CA 94305-4070, U.S.A.
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Abstract

The dilute-nitride GaInNAs shows great promise in becoming the next choice for 1 eV photodetector and multi-junction photovoltaic applications due to the ability for it to be grown lattice-matched on GaAs substrates. This paper will present results from high-power photodetector devices fabricated from high-quality thick GaInNAs and metamorphic InGaAs materials grown by MBE. The internal quantum efficiency of rear-illuminated PIN photodiodes with thick GaInNAs films as the intrinsic region (roughly 62% at 1064 nm) is somewhat lower than comparable metamorphic InGaAs devices (roughly 75% at 1064 nm). However, the dark current density of the GaInNAs devices is also somewhat lower (roughly 3 μA/cm2 at 2×104 V/cm bias) than the InGaAs devices (roughly 20 μA/cm2 at 2×104 V/cm bias), while the breakdown voltages (beyond -20 V) are comparable. Materials characterization of each structure, including x-ray diffraction and room-temperature as well as temperature-dependent photoluminescence studies will be presented in order to explain the characteristics observed in the devices composed of the two different material systems.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 864: Symposium E – Semiconductor Defect Engineering-Materials, Synthesis Structures and Devices , 2005 , E6.9
Copyright
Copyright © Materials Research Society 2005

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References

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