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Comparison of Er3+ Photoluminescence and Photoluminescence Excitation Spectroscopy in In-situ-doped GaN:Er and Er-implanted GaN

Published online by Cambridge University Press:  17 March 2011

Andrea M. Mitofsky ,
George C. Papen ,
Stephen G. Bishop ,
Dong-Seon Lee  and
Andrew J. Steckl
Andrea M. Mitofsky
Affiliation:
Electrical and Computer Engineering Department, University of IIlings, Urbana IL 61801
George C. Papen
Affiliation:
Electrical and Computer Engineering Department, University of IIlings, Urbana IL 61801
Stephen G. Bishop
Affiliation:
Electrical and Computer Engineering Department, University of IIlings, Urbana IL 61801
Dong-Seon Lee
Affiliation:
Nanoelectrical Laboratory, University of Cincinnati, Cincinnati, OH 45221-0030
Andrew J. Steckl
Affiliation:
Nanoelectrical Laboratory, University of Cincinnati, Cincinnati, OH 45221-0030
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Abstract

Site-selective photolumiescence (PL) and photoluminescence excitation (PLE) spectroscopies have been carried out at 6 K on the ∼1540nm 41/32 → 4I1/52 Er3+ transition in in-situ-doped GaN:Er which have detected nine differenct Er3+ sites and associated PL spectra. Three distinct Er3+ sites are identified in the in-situ-doped samples. For the in-situ-doped samples, the concentration of the various Er+3 sites are comparable while for the ion-implanted sample, the concertration of one Er3+ site was higher than the concentration of the other sites. In-situ-doped samples grown with different Ex-cell temperatures were considered, and the width of the PLE spectrum appears to be a function of the Er-cell temperature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 639: Symposium G – GaN and Related Alloys-2000 , 2000 , G6.26
Copyright
Copyright © Materials Research Society 2001

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References

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