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A Comparison of CH4:H2 and C2H6:H2 Morie of GaAs

Published online by Cambridge University Press:  21 February 2011

V. J. Law ,
G. A. C. Jones ,
M. Tewordt  and
H. Royal
V. J. Law
Affiliation:
Cavendish Laboratory, Madingley Rd, Cambridge, CB3 OHE, U.K.
G. A. C. Jones
Affiliation:
Cavendish Laboratory, Madingley Rd, Cambridge, CB3 OHE, U.K.
M. Tewordt
Affiliation:
Cavendish Laboratory, Madingley Rd, Cambridge, CB3 OHE, U.K.
H. Royal
Affiliation:
Plasma Technology, Yatton, Bristol, BS19 4AP, U.K.
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Abstract

A comparative study is made of CH4:H2 and CH3−CH3:H2 metal-organic reactive ion etching of molecular beam epitaxially grown GaAs. The etch rates are measured to be proportional to both CH4 and CH3−CH3 concentrations, with empirically determined order of reactions at 1.1 W.cm−2 of, 0.57 ± 0.1 and 0.32 ± 0.01. Approximately twice the number of CH4 molecules are required to produce the equivalent etch rate as CH3−CH3 molecules. The measured apparent activation energies are low, Ea ≤ 6 meV, and GaAs area loading effects are the same. These results indicate that methyl radicals are predominately responsible for the reaction.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 190: Symposium M – Plasma Processing and Synthesis of Materials III , 1990 , 247
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

[1] Niggebrugge, U., Klug, M & Garus, G, GaAs and related comnpounds (Inst. Phys. Conf. Ser. 79, Karuizawa, Japan.1985) pp. 367–372.Google Scholar
[2] Cheung, R., Thoms, S., Beaumont, S. P., Doughty, G., J.Law, V., & Wilkinson, C. D. W., Electron. Lett. 23, 857 (1987).Google Scholar
[3] Henry, L., Voudry, C., & Grandjoux, P., Electron. Lett. 23, 1253 (1987).Google Scholar
[4] Thoms, S., McIntyre, I., Beaumont, S. P., Al-Mudares, M., Cheung, R., & Wilkinson, C. D. W., J. Vac. Sci. Technol. B6, 127 (1988).Google Scholar
[5] Law, V. J., & Jones, G. A. C., Semicond. Sci. Technol. 4, 833 (1989).Google Scholar
[6] Matsui, T., Sugimoto, H., Ohishi, T., Ogata, H., Electron. Lett. 24, 798 (1988).Google Scholar
[7] Pearton, S. J., Chakrabarti, U. K., & Hobson, W. S., J. Appl. Phys. 66. 2061 (1989).Google Scholar
[8] Andieh, E., Adesida, I., Brock, T., Caneau, C., & Keramides, . J. Vac. Sci. Technol. B7 (6), 1841 (1989).Google Scholar
[9] Hayes, T. R., Dreisbach, M. A., Thomas, P. M., Dautremont-Smith, W. C., & Heimbrook, L. A.. J. Vac. Sci.Technol. B7, 113 (1989).Google Scholar
[10] Hayes, T. R., Dautremont-Smith, W. C., Luftman, H. S., & Lee, J. W.. Appl. Phys. Lett. 55, 56 (1989).Google Scholar
[11] Collot, P., & Gaonach, C.. Semicond. Sci. Technol. 4, 237 (1990).Google Scholar
[12] Law, V. J., Jones, G. A. C., Peacock, D. C., Ritchie, D., Frost, J. E. F.. J. Vac. Sci. Technol. B7 (6), 1479 (1989).Google Scholar
[13] Pearton, S. J., & Hobson, W. S.. J. Appl. Phys. 66, 5009 (1989).Google Scholar
[14] Long, L. H., & Sackman, J. F.. Trans. Far. Soc. 54, 1997 (1958).Google Scholar
[15] Jacko, M. G., & Price, S. J. W.. Can. J. Chem. 42, 1198 (1964).Google Scholar
[16] Law, V. J., Jones, G. A. C., Patel, N. K., & Tewordt, M.. Tc be published. Proc. Int. Conf. ME89Cambridge. (April. North-Holland. Amsterdam 1990).Google Scholar
[17] Law, V. J., Jones, G. A. C., & Tewordt, M.. Semicond. Sci. Technol. 5, 281 (1990).Google Scholar
[18] Chapmam, B. N., & Minkiewicz, V. J.. J. Vac. Sci. Technol. 15, 329 (1978).Google Scholar
[19] Pearton, S. J., & Hobson, W. S.. J. Appl. Phys. 66, 5018 (1989).Google Scholar
[20] Carter, A. J., Thomas, B., Morgan, D. V., Bhardwaj, J. K., McQuarrie, A. M., Stephens, M. A.. IEE Proc. 136 ptJ.1 (1989).Google Scholar