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Comparison Between Ion-Beam and Thermal-Annealing Induced Solid Phase Epitaxy in Fe-Implanted Si

Published online by Cambridge University Press:  03 September 2012

X.W. Lin ,
J. Desimoni ,
H. Bernas ,
Z. Liliental-Weber  and
J. Washburn
X.W. Lin
Affiliation:
Materials Science Division, Lawrence Berkeley Laboratory, CA 94720
J. Desimoni
Affiliation:
Centre de Spectromètrie Nucléaire et Spectromètrie de Masse, Bât. 108, 91405 Orsay Campus, France
H. Bernas
Affiliation:
Centre de Spectromètrie Nucléaire et Spectromètrie de Masse, Bât. 108, 91405 Orsay Campus, France
Z. Liliental-Weber
Affiliation:
Materials Science Division, Lawrence Berkeley Laboratory, CA 94720
J. Washburn
Affiliation:
Materials Science Division, Lawrence Berkeley Laboratory, CA 94720
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Abstract

Rutherford backscattering spectrometry and transmission electron microscopy were used to compare thermally induced solid phase epitaxy (SPE) with ion-beam induced epitaxial crystallization (IBIEC) of Fe-implanted Si (001). It was found that thermal annealing leads to both Si SPE and β-FeSi2 precipitation at 520°C, but has no visible effect at 320°C. In contrast, Si SPE and FeSi2 precipitation occur at both 320 and 520°C, when ion irradiation is introduced. The precipitates grow epitaxially as γ-FeSi2 at 320°C, but consist of both β-FeSi2 and γ-FeSi2 at 520°C. It was also found that thermal annealing at 520°C results in Fe segregation toward the surface, while IBIEC basically retains the as-implanted Fe profile.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 320: Symposium D – Silicides, Germanides, and Their Interfaces , 1993 , 97
Copyright
Copyright © Materials Research Society 1994

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References

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