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A Comparative Study on the Titanium Nitride (TiN) as a Diffusion Barrier Between Al/Si and Cu/Si: Failure Mechanism and Effect of “Stuffing”

Published online by Cambridge University Press:  15 February 2011

Ki-Chul Park  and
Ki-Bum Kim
Ki-Chul Park
Affiliation:
Inter-university Semiconductor Research Center, Division of Materials Science and Engineering, Seoul National University, Seoul, Korea, 151-742
Ki-Bum Kim
Affiliation:
Inter-university Semiconductor Research Center, Division of Materials Science and Engineering, Seoul National University, Seoul, Korea, 151-742
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Abstract

The diffusion barrier properties of 100-nm-thick TiN films, both as-deposited and "stuffed", were investigated in both Al/TiN/Si and Cu/TiN/Si metallization systems. In Al/TiN/Si systems, the TiN barrier fails by the formation of both Al spikes and Si pits in the Si substrate. However, in Cu/TiN/Si systems, the failure of TiN diffusion barriers occurs by the predominant diffusion of Cu into the Si substrate, which forms dislocations along the projection of Si {111} plane and precipitates (presumably Cu-silicides) around the dislocation. In Al/TiN/Si systems, it is shown that the diffusion barrier property of TiN is significantly enhanced by "stuffing" in N2 ambient prior to Al deposition. However, in Cu/TiN/Si systems, it is found that the "stuffing" of TiN does not improve the diffusion barrier property as it does in Al/TiN/Si systems.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 391: Symposium T – Materials Reliability in Microelectronics V , 1995 , 211
Copyright
Copyright © Materials Research Society 1995

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References

1 Takasago, H., Adachi, K., and Takada, M., J. Electron. Mater., 18, 319 (1989).Google Scholar
2 Weber, E. R., Appl. Phys., A30, 1 (1983).Google Scholar
3 Wang, S.-Q., MRS Bulletin, vol. XIX, no. 8, Materials Research Society (1994). p. 30.Google Scholar
4 Ngan, K., Mosely, R., Xu, Z. and Raaijmakers, I. J., in Proceedings of the llth VLSI Multilevel Interconnection Conference, p. 452, IEEE, New York (1994).Google Scholar
5 Kumar, N., McGinn, J. T., Pourrezaei, K., Lee, B., and Douglas, E. C.. J. Vac. Sci. Technol., A6, 1602 (1988).Google Scholar
6 Raaijmakers, I. J., Vtris, R. N., Yang, J., Ramaswami, S., Lagendijk, A., Roberts, D. A., and Broadbent, E. K., in Proc. of Mater. Res. Soc. Symp., p. 260, Pittsburgh (1992).Google Scholar
7 Mëndl, M., Hoffmann, H., and Kücher, P., J. Appl. Phys., 68, 2127 (1990).Google Scholar