Hostname: page-component-848d4c4894-hfldf Total loading time: 0 Render date: 2024-05-13T02:15:26.263Z Has data issue: false hasContentIssue false
  • English
  • Français

Comparative Study of the Optical and Vibrational Properties of a-SiNx:H Films Prepared from SiH4-N2 and SiH4-NH3 Gas Mixtures by rf Plasma

Published online by Cambridge University Press:  21 February 2011

J. Campmany ,
E. Bertran ,
J.L. Andújar ,
A. Canillas ,
J. M. López-Villegas  and
J.R. Morante
J. Campmany
Affiliation:
Departament de Física Aplicada i Electrònica, Universitat de Barcelona, Av. Diagonal, 647. E08028 Barcelona (Catalonia) SPAIN.
E. Bertran
Affiliation:
Departament de Física Aplicada i Electrònica, Universitat de Barcelona, Av. Diagonal, 647. E08028 Barcelona (Catalonia) SPAIN.
J.L. Andújar
Affiliation:
Departament de Física Aplicada i Electrònica, Universitat de Barcelona, Av. Diagonal, 647. E08028 Barcelona (Catalonia) SPAIN.
A. Canillas
Affiliation:
Departament de Física Aplicada i Electrònica, Universitat de Barcelona, Av. Diagonal, 647. E08028 Barcelona (Catalonia) SPAIN.
J. M. López-Villegas
Affiliation:
Departament de Física Aplicada i Electrònica, Universitat de Barcelona, Av. Diagonal, 647. E08028 Barcelona (Catalonia) SPAIN.
J.R. Morante
Affiliation:
Departament de Física Aplicada i Electrònica, Universitat de Barcelona, Av. Diagonal, 647. E08028 Barcelona (Catalonia) SPAIN.
Get access

Abstract

The properties of amorphous silicon nitride films (a-SiNx:H) prepared by PECVD from SiH4-NH3 and SiH4-N2 gas mixtures have been determined by spectroscopie ellipsometry and FTIR spectroscopy as a function of the nitrogen concentration measured by XPS. The films are transparent for silane ratios [SiH4]/([SiH4] + [NH3]) < 20% and [SiH4]/([SiH4] + [N,]) < 1.5%. The refractive index shows a wide range of progressive variation from 3.2 for high silane concentrations to 1.8 for low silane concentrations. The hydrogen content of the low-absorbing films has much lower values for those obtained by SiH4 + N2 plasma than for those obtained by SiH4 + NH3 plasma. The results are discussed in terms of growth models of PECVD a-SiNx:H films from SiH4-NH3 and SiH4-N2 mixtures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 258: Symposium A – Amorphous Silicon Technology – 1992 , 1992 , 643
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Madan, A. and Shaw, M.P., The Physics and Applications of Amorphous Semiconductors, (Academic Press, San Diego, 1988).Google Scholar
2 Hwang, H., Ting, W., Maiti, B., Kwong, D.L. and Lee, J., Appl. Phys. Lett. 57, 1010 (1990).Google Scholar
3 Andújar, J.L., Bertran, E., Canillas, A., Esteve, J., Andreu, J. and Morenza, J.L., Vacuum 39, 795 (1989).Google Scholar
4 Canillas, A., Bertran, E., Andújar, J.L. and Morenza, J.L., Vacuum 39, 785 (1989).Google Scholar
5 Piggins, N., Davis, E.A., Bayliss, S.C., J. Non-Cryst. Sol. 97&98, 991 (1987).Google Scholar
6 Bruggeman, D.A.G., Ann. Phys. (Leipzig) 24, 636 (1935).Google Scholar
7 Collins, R.W., Guha, S., J. Non-cryst. Sol. 77&78, 1003 (1985).Google Scholar
8 Kärcher, R., Ley, L., Johnson, R.L., Phys. Rev. B30, 1896 (1984).Google Scholar
9 Lucovsky, G., Yang, J., Chao, S.S., Tyler, J.E. and Gubatyj, W., Phys. Rev. B 28, 3234 (1983).Google Scholar
10 Narikawa, S., Kojima, Y. and Ekara, S., Jap. J. Appl. Phys. 24, L861 (1985).CrossRefGoogle Scholar
11 Morimoto, A., Phys. Stat. Sol. B 63, 715 (1983).Google Scholar
12 Smith, D.L., Mat. Res. Soc. Fall Meet., Boston, MA, Nov. 27, (1989) Symp. on Charact. of PECVD Proc., paper 1–22.Google Scholar
13 Smith, D.L., Alimonda, A.S., Chen, C.C. and Ready, S.E. and Wacker, B., J.EIectochem. Soc. 137, 6614 (1990).Google Scholar
14 Smith, D.L., Alimonda, A.S. and Preissig, F.J., J. Vac. Sci. Technol. B8, 551 (1990).CrossRefGoogle Scholar