Hostname: page-component-7479d7b7d-qs9v7 Total loading time: 0 Render date: 2024-07-11T07:30:59.888Z Has data issue: false hasContentIssue false
  • English
  • Français

Comparative studies on BaZrxTi1-xO3 thin films deposited by Sol-gel and Pulse laser deposition

Published online by Cambridge University Press:  01 February 2011

A. Dixit ,
P. Bhattacharaya ,
S. B. Majumder ,
R. S. Katiyar  and
A. S. Bhalla
A. Dixit
Affiliation:
Department of Physics, University of Puerto Rico, San Juan, PR-00931–3343
P. Bhattacharaya
Affiliation:
Department of Physics, University of Puerto Rico, San Juan, PR-00931–3343
S. B. Majumder
Affiliation:
Department of Physics, University of Puerto Rico, San Juan, PR-00931–3343
R. S. Katiyar
Affiliation:
Department of Physics, University of Puerto Rico, San Juan, PR-00931–3343
A. S. Bhalla
Affiliation:
Materials Research Center, Pennsylvania State University, University Park, PA 16802
Get access

Abstract

Ferroelectric thin films of BaZrxTi1-xO3 (BZT) were deposited on platinum (Pt) and platinized silicon (Pt/Si) substrates by sol-gel and pulse laser deposition technique respectively. The structure and preferred orientation of the films were examined by x-ray diffraction measurements. The phase formation of sol-gel derived BZT films were found to be at high temperature (1100°C) compare to the pulse laser deposited BZT films ∼ 700°C. Polycrystalline films were observed by both techniques. Ferroelectric nature of the films was confirmed by hysteresis and capacitance-voltage characteristics using platinum top electrodes. Dielectric constant as well as loss was found to decrease by increasing Zr contents. Surface morphology predicted smooth crack free surface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 784: Symposium C – Ferroelectric Thin Films XII , 2003 , C8.18
Copyright
Copyright © Materials Research Society 2004

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Ho, J. J., Fang, Y. K., Wu, K. H., Hsieh, W. T., Chu, C. W., Huang, C. R., Ju, M.S., and Chang, C. P., IEEE Electron Device Lett., 19, 189 (1998).Google Scholar
2. Kingon, A. I., Maria, J. P., and Streiffer, S. K., Nature (London), 406, 1032 (2000).Google Scholar
3. Desu, S.B., Joshi, P.C., Zhang, S., Ryu, S.Y., Appl. Phys. Lett., 71, (1997).Google Scholar
4. Das, R.R., Bhattacharaya, P., Perez, W., and Katiyar, R.S., Appl. Phys. Lett., 81, 4052, (2002).Google Scholar
5. Jones, R. W., Fundamental principles of sol-gel technology, (1989) ISBN 0–901462–69–1.Google Scholar
6. Roy, D. and Krupanidhi, S.B, Appl. Phys. Lett., 61, 2057 (1992).Google Scholar
7. Shy, Hsiou.Jeng and Wu, Tai-Bor., JJAP., 37, 4049 (1998).Google Scholar
8. Wu, T.B., Wu, C. M., and Chen, M.L., Appl. Phys. Lett., 69, 18 (1999).Google Scholar
9. Dobal, P.S., Dixit, A., and Katiyar, R. S., Yu, Z., Guo, R., and Bhalla, A. S., J. Appl. Phys., 89(12), 8085 (2001).Google Scholar
10. Farhi, R., Marssi, M. El., Simon, A., Ravez, J., Eur. Phy. J.B, 9, (1999).Google Scholar
11. Dixit, A., Majumder, S.B., Katiyar, R.S. and Bhalla, A.S., Appl. Phys. Lett., 82, 2679 (2003).Google Scholar
12. Yu, Z., Guo, R., Bhalla, A.S., Appl. Phys. Lett., 77, 1535, (2000).Google Scholar
13. Dixit, A., Majumder, S.B., Savvinov, A., katiyar, R.S., Guo, R., Bhalla, A.S., Mat. Lett,. 56, 933 (2002).Google Scholar
14. Das, R.R., Perez, W., Rodriguez, R.J., Dobal, P.S., Katiyar, R.S. and Krupanidhi, S.B., Mat. Res. Soc. Symp. Proc., 655, 0000, (2001).Google Scholar
15. Yamamoto, T., Saho, M., Okazaki, K., and Goo, Ed., Jpn. J. Appl. Phys., Suppl. 26, 57 (1987).Google Scholar
16. Dobal, P.S. and Katiyar, R.S., J. Raman Spectroscopy, 33, 405 (2002).Google Scholar