Hostname: page-component-848d4c4894-2xdlg Total loading time: 0 Render date: 2024-06-18T23:14:26.906Z Has data issue: false hasContentIssue false
  • English
  • Français

Collision Cascade Densification of Materials

Published online by Cambridge University Press:  25 February 2011

R. H. Bassel ,
T. D. Andreadis ,
M. Rosen ,
G. P. Mueller  and
G. K. Hubler
R. H. Bassel
Affiliation:
Naval Research Laboratory, Washington, D.C. 20375-5000
T. D. Andreadis
Affiliation:
Naval Research Laboratory, Washington, D.C. 20375-5000
M. Rosen
Affiliation:
Naval Research Laboratory, Washington, D.C. 20375-5000
G. P. Mueller
Affiliation:
Naval Research Laboratory, Washington, D.C. 20375-5000
G. K. Hubler
Affiliation:
Naval Research Laboratory, Washington, D.C. 20375-5000
Get access

Abstract

Computer simulations of the collision cascade process were used to investigate surface densification during ion beam assisted deposition (IBAD). The objective of the investigation was to see if densification resulted directly from the cascade, without any contribution from diffusion enhancement brought on by the bombardment. Calculations, using the computer code MARLOWE, were carried out for Ar bombardment of a crystalline Ge target, containing a void, using ion beam energies of 0.065, 0.5 and 1 keV. These results were used as data for a differential equation that describes the effect on void size of the simultaneous Ge atom deposition and Ar ion bombardment of a substrate containing voids. The present attempt examined the effects of irradiations on voids of 17 and 35 vacancies.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 128: Symposium A – Processing and Characterization of Materials Using Ion Beams , 1988 , 151
Copyright
Copyright © Materials Research Society 1989

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Cuomo, J.W., Harper, J.M.E., Guarnieri, C.R., Yee, D.S., Attanasio, L.J., Angilello, J. and Yu, C.T., J. Vac. Sci. Technol. 20, 39 (1982).10.1116/1.571462Google Scholar
[2] Yehoda, J.E., Yang, B., Vedam, K. and Messier, R., J. Vac. Sci. Technol. A6, 1631 (1988).Google Scholar
[3] Martin, P.J., J. Mater. Sci. 21, 1 (1986); P.J. Martin, R.P. Welterfield and W.G. Sainty, J. Appl. Phys. 55, 235 (1984).Google Scholar
[4] Hirsch, E.H. and Varga, I.K., Thin Solid Films 62, 99 (1980).10.1016/0040-6090(80)90207-2CrossRefGoogle Scholar
[5] Hubler, G.K., J. Mat. Sci. & Engin., to be published; proceedings of Surface Modification of Metals by Ion Beams, Riva del Gorda, Italy, Sept. 12–16, 1988.Google Scholar
[6] Brighton, D.R. and Hubler, G.K., Nucl. Instu. & Meth. in Phys Res. B28, 527 (1987).10.1016/0168-583X(87)90498-8CrossRefGoogle Scholar
[7] See, e.g., Muller, K-H., J. Appl. Phys. 62, 1796 (1987).10.1063/1.339559CrossRefGoogle Scholar
[8] Muller, K-H., Phys. Rev. B35, 7906 (1987)10.1103/PhysRevB.35.7906CrossRefGoogle Scholar
[9] Robinson, M. T. and Torrens, I.M., Phys. Rev. B9, 5008 (1974).10.1103/PhysRevB.9.5008Google Scholar
[10] Andreadis, T.D., et al, “The Influence of Defect Concentrations on Migration Energies in AgZn Alloys,” these proceedings.Google Scholar