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Collection Efficiencies Greater Than Unity by Electron Or Hole Gating in a-Si:H p-i-n Diodes

Published online by Cambridge University Press:  15 February 2011

J.-H. Zollondz ,
C. Main  and
S. Reynolds
J.-H. Zollondz
Affiliation:
School of Science and Engineering, University of Abertay Dundee, Dundee DDI 1HG, UK, phrhz@tay.ac.uk
C. Main
Affiliation:
School of Science and Engineering, University of Abertay Dundee, Dundee DDI 1HG, UK, phrhz@tay.ac.uk
S. Reynolds
Affiliation:
School of Science and Engineering, University of Abertay Dundee, Dundee DDI 1HG, UK, phrhz@tay.ac.uk
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Abstract

We report measured electron and hole gating in thick a-Si:H (3.5 μm) p-i-n diodes under reverse bias conditions. Previous publications have shown very high collection efficiency values for electron gating (p-side bias, n-side probe) of up to 50 (i.e. 5000%) for measured and simulated data and predictions of up to 400 (i.e. 40000%) from simulations. Reversing the usual sides of illumination for (electron) gating a situation can be created where, by n-side bias and p-side probe illumination, holes can be gated to travel through the sample to be collected at the contact. Even though the holes have much lower mobility, by this process we can still obtain collection efficiencies greater than unity. This measurement is more difficult because of unwanted illumination by stray bias beam photons on the more sensitive p-side, caused by reflections within the apparatus. Simulation of this situation corroborates qualitatively the measured data. A wide ranging study of the gating phenomenon in relation to different incident wavelengths and photon fluxes for bias and probe beam is reported. We present comparisons of electron and hole gating by measurement and simulation and explain the phenomenon for both electron and hole gating in terms of field changes near to the incident bias interface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 557: Symposium A – Amorphous and Heterogeneous Silicon Thin Films—Fundamentals to Devices—1999 , 1999 , 475
Copyright
Copyright © Materials Research Society 1999

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