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Coherent and Incoherent Relaxation in III-V Heterostructures

Published online by Cambridge University Press:  10 February 2011

André Rocher  and
Etienne Snoeck
André Rocher
Affiliation:
Centre d'Elaboration de Matériaux et d'Etudes Structurales, CEMES/CNRS, BP 4347, F-31055 Toulouse, France
Etienne Snoeck
Affiliation:
Centre d'Elaboration de Matériaux et d'Etudes Structurales, CEMES/CNRS, BP 4347, F-31055 Toulouse, France
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Abstract

The relaxation for large lattice mismatch systems such as GaSb/GaAs and GaAs/InP has been studied by numerical analysis of HREM images. The GaSb/GaAs epitaxial system can be obtained with an interface constituted by a perfect square array of Lomer dislocations. GaSb appears to be coherently and homogeneously relaxed. For GaAs/InP grown at 450°C the GaAs layer becomes well relaxed at some distances from the interface by a network of randomly distributed partial and 60° dislocation segments with a limited length. At low temperature, the plastic relaxation appears directly at the growth front when the individual adatoms take a position different from the ideal pseudomorphic one. In this case, the relaxation mechanism is incoherent.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 594: Symposium V – Thin Films - Stresses & Mechanical Properties VIII , 1999 , 169
Copyright
Copyright © Materials Research Society 2000

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References

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