Hostname: page-component-77c89778f8-n9wrp Total loading time: 0 Render date: 2024-07-20T00:33:51.784Z Has data issue: false hasContentIssue false
  • English
  • Français

Coherency Stresses in Mo/Ni Multilayer Films

Published online by Cambridge University Press:  25 February 2011

J.A. Bain ,
L.J. Chyung ,
S. Brennan  and
B.M. Clemens
J.A. Bain
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305-2205
L.J. Chyung
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305-2205
S. Brennan
Affiliation:
Stanford Synchrotron Radiation Laboratory, Stanford, CA 94309
B.M. Clemens
Affiliation:
Stanford Synchrotron Radiation Laboratory, Stanford, CA 94309
Get access

Abstract

Strain measurements were performed on multilayer films of Mo/Ni using x-ray diffraction with the scattering vector at varying degrees of inclination to the surface normal. In-plane variations in the lattice parameters confirm that there are coherency stresses between the Mo and Ni layers. Assuming the Nishiama-Wasserman orientation for the planes of Ni and Mo allowed the calculation of the complete stress state in both materials. The in-plane lattice parameter, the perpendicular lattice parameter and the unstrained lattice parameter have also been derived from the data. The substrate interaction stress which would be necessary to provide a force balance between the layers was calculated. This was found to be in good agreement with the global stress measured from wafer curvature. Preliminary results of modelling of the high angle superlattice lines to extract interfacial roughness in the growth direction are also presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 221: Symposium C – Heteroepitaxy of Dissimilar Materials , 1991 , 477
Copyright
Copyright © Materials Research Society 1991

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Yang, W. M. C., Tsakalakos, T. and Hilliard, J. E.. J. of Appl. Phys., 48,876(1977).Google Scholar
[2] Jankowski, A. and Tsakalakos, T.. J. of Appl. Phys., 57(6),1835(1985).Google Scholar
[3] Khan, M. R., Chun, C. S. L., Felcher, G. P., Grimsditch, M., Kueny, A., Falco, C. M., and Schuller, I. K.. Phys. Rev. B, 27,7186(1983).CrossRefGoogle Scholar
[4] Clemens, B.M. and Eesley, G.L.. Phys. Rev. Lett., 61,2356–9(1988).CrossRefGoogle Scholar
[5] Bennett, W. R., Leavitt, J. A. and Falco, C. M.. Phys. Rev. B, 15(9),4199(1987).CrossRefGoogle Scholar
[6] Baker, S.P. and Nix, W.D.. In Thin Films: Stresses and Mechanical Properties II edited by Pharr, G. Oliver, W., Doerner, M. and Brotzen, F.R. (Mater. Res. Soc. Proc. 188, Pittsburgh, PA 1990) pp.289–294.Google Scholar
[7] Nix, W.D.. Met. Trans. A, 20A,2217–45(1989).Google Scholar
[8] Matthews, J.W. in Epitaxial Growth, edited by Matthews, J.W. (Academic Press, N.Y., 1975),p. 559.CrossRefGoogle Scholar
[9] Schuller, I. K. and Raliman, A.. Phys. Rev. Lett., 50(18),1377(1983).Google Scholar
[10] Camnmarata, R. C. and Sieradzki, K.. Phys. Rev. Lett., 62,2005(1989).Google Scholar
[11] Ruud, J.A., Witvroum, A, and Spaepen, F. (Mater. Res. Soc. Proc. 209, Pittsburgh, PA 1991) pp.289–294.Google Scholar
[12] Bain, J.A., Chyung, L.J., Brennan, S.M., and Clemens, B.M.. To be Published, Phys. Rev. B, 1991.Google Scholar
[13] Clemens, B.M., Eesley, G.L., and Paddock, C.A.. Phmys. Rev. B, 37,1085–96(1988).CrossRefGoogle Scholar
[14] Flinn, P.A., Gardner, D.S. and Nix, W.D.. IEEE Trans. on Electron Devices, ED–34,689–99(1987).CrossRefGoogle Scholar
[15] Bauer, E. and Merwe, Jan. Il. van der. Phys. Rev. B, 33(6),3657(1986).CrossRefGoogle Scholar
[16] Homma, H., Yang, K-Y., and Schuller, I.K.. Phys. Rev. B, 36,9435–8(1987).Google Scholar
[17] Cowley, J. M.. Diffraction Physics, (North-llolland, New York, 1986).Google Scholar
[18] Clemens, B. M. and Gay, J. G.. Phys. Rev. B, 35,9337(1987). Raipid Communication.Google Scholar
[19] Stearns, M.B.. Phys. Rev. B, 38,8109–13(1988).CrossRefGoogle Scholar
[20] Hansen, M. and Anderko, K., Constitution of Binary Alloys, (McGraw-Hill Book Co., New York, 1958).Google Scholar