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Co-doping Approach for β-type ZnO with Combinatorial Laser MBE Method

Published online by Cambridge University Press:  17 March 2011

A. Tsukazaki ,
H. Saito ,
M. Sumiya ,
K. Tamura ,
S. Fuke ,
H. Koinuma  and
M. Kawasaki
A. Tsukazaki
Affiliation:
Department of Innovative and Engineered Materials and Frontier Collaborative Research Center, Tokyo Institute of Technology, Yokohama 226-8502, JAPAN
H. Saito
Affiliation:
Electronic Components Laboratories, SHARP Corporation, Tenri 632-8567, Japan
M. Sumiya
Affiliation:
Department of Electrical and Electronic Engineering, Shizuoka University, Hamamatsu 432-8561, Japan
K. Tamura
Affiliation:
Department of Innovative and Engineered Materials and Frontier Collaborative Research Center, Tokyo Institute of Technology, Yokohama 226-8502, JAPAN
S. Fuke
Affiliation:
Department of Electrical and Electronic Engineering, Shizuoka University, Hamamatsu 432-8561, Japan
H. Koinuma
Affiliation:
Department of Innovative and Engineered Materials and Frontier Collaborative Research Center, Tokyo Institute of Technology, Yokohama 226-8502, JAPAN Combinatorial Materials Explosion and Technology (COMET), Tsukuba 305-0044, Japan
M. Kawasaki
Affiliation:
Department of Innovative and Engineered Materials and Frontier Collaborative Research Center, Tokyo Institute of Technology, Yokohama 226-8502, JAPAN Combinatorial Materials Explosion and Technology (COMET), Tsukuba 305-0044, Japan Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan
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Abstract

We show here three different ways of combinatorial experiments for achieving precise control of dopant concentration in ZnO thin films. Alternating ablation of highly pure single crystal target and ceramics target doped with concentrated Ga dopant yielded in a systematic control of Ga concentration with keeping minimal contamination of undesired impurity. Secondary ion mass spectroscopy for a stack of several ZnO films grown at different temperatures under a constant exposure of N radical gave us a systematic calibration curve for the N concentration. With using a special heating method to give a controlled temperature gradient on a substrate, we demonstrate that continuous spread of N concentration can be built in a film on a substrate with keeping constant Ga concentration. Such systematic experiments taking into account the “combinatorial” concept enable us to make ZnO films with controlled dopant concentrations.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 700: Symposium S – Combinatorial and Artificial Intelligence Methods in Materials Science , 2001 , S1.7
Copyright
Copyright © Materials Research Society 2002

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References

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