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CO2 laser annealing synthesis of silicon nanocrystals buried in Si-rich SiO2

Published online by Cambridge University Press:  01 February 2011

Chun-Jung Lin ,
Yu-Lun Chueh ,
Li-Jen Chou ,
Hao-Chung Kuo  and
Gong-Ru Lin
Chun-Jung Lin
Affiliation:
Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu, Taiwan R. O. C.
Yu-Lun Chueh
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan R. O. C.
Li-Jen Chou
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan R. O. C.
Hao-Chung Kuo
Affiliation:
Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu, Taiwan R. O. C.
Gong-Ru Lin
Affiliation:
Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu, Taiwan R. O. C.
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Abstract

Localized synthesis of 3-8 nm Si nanocrystals (nc-Si) in PECVD-grown Si-rich SiO2 (SRSO) film is demonstrated using CO2 laser annealing at an intensity below the ablation-threshold (6.0 kW/cm2). At an optimized surface temperature of 1285°C, the precipitated nc-Si in CO2-laser-annealed SRSO film results in near-infrared photoluminescence (PL) at 806 nm, whereas the ablation damage induced at higher laser intensities as well as temperatures results in blue PL at 410 nm related to structural defects. The refractive index of the laser-annealed SRSO at 633 nm increases from 1.57 to 2.31 as the laser intensity increases from 1.5 to 6.0 kW/cm2. Transmission electron microscopy analysis reveals that the average size and volume density of Si nanocrystals embedded in the SRSO film are about 6 nm and 4.5×1016 cm-3, respectively. The CO2 laser annealing with controlled intensity and spot size can potentially accomplish in-situ, localized annealing of the SRSO film without causing irreversible damage to nearby electronics.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 862: Symposium A – Amorphous and Nanocrystalline Silicon Science and Technology–2005 , 2005 , A19.2
Copyright
Copyright © Materials Research Society 2005

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