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CMOS compatible Si/SiO2 multilayers for Light Emitting Diodes

Published online by Cambridge University Press:  17 March 2011

Z. Gaburro ,
L. Pavesi ,
G. Pucker  and
P. Bellutti
Z. Gaburro
Affiliation:
INFM and Department of Physics, University of Trento, via Sommarive 14, I-38050 Povo (Tn), Italy
L. Pavesi
Affiliation:
INFM and Department of Physics, University of Trento, via Sommarive 14, I-38050 Povo (Tn), Italy
G. Pucker
Affiliation:
ITC-IRST, via Sommarive 16, I-38050 Povo (Tn), Italy
P. Bellutti
Affiliation:
ITC-IRST, via Sommarive 16, I-38050 Povo (Tn), Italy
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Abstract

We report photoluminescence and electroluminescence at room temperature in diodes based on Si/SiO2 multilayers. The multilayers are fabricated by alternating Si and SiO2 layers, whose thickness is, respectively, 2 and 5 nanometers. In photoluminescence, a single band is observed, centered at 800 nm, which is due to electron-hole pair recombination under quantum confinement. On the other hand, in electroluminescence, two bands are reported. The first band is in the infrared spectrum, and is blackbody radiation. The second band is visible, and is originated by relaxation of a single type of electrical carrier (electrons), as suggested by a fast decay time (less than 0.1 µs). Possible mechanisms can be hot-electron relaxation or coupling with surface plasmon-polaritons.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 638: Symposium F – Microcrystaline & Nanocrystalline Semiconductors-2000 , 2000 , F18.5.1
Copyright
Copyright © Materials Research Society 2001

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