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The Closed-Form Solutions For The Breakdown Voltages Of 6H-SiC Reachthrough Diodes

Published online by Cambridge University Press:  10 February 2011

You-Sang Lee ,
D.-S. Byeon ,
Y.-I. Choi ,
I.-Y. Park  and
Min-Koo Han
You-Sang Lee
Affiliation:
School of Electrical Eng., Seoul National Univ., Shilim-dong, Kwanak-ku, Seoul, 151–742, Korea, +82-2-880-7254, +82-2-873-9953, igbt@chollian.net
D.-S. Byeon
Affiliation:
School of Electrical Eng., Seoul National Univ., Shilim-dong, Kwanak-ku, Seoul, 151–742, Korea, +82-2-880-7254, +82-2-873-9953, igbt@chollian.net
Y.-I. Choi
Affiliation:
School of Electronics Eng., Ajou Univ., Wonchun-dong, Suwon 442-749, Korea
I.-Y. Park
Affiliation:
School of Electronics Eng., Ajou Univ., Wonchun-dong, Suwon 442-749, Korea
Min-Koo Han
Affiliation:
School of Electrical Eng., Seoul National Univ., Shilim-dong, Kwanak-ku, Seoul, 151–742, Korea, +82-2-880-7254, +82-2-873-9953, igbt@chollian.net
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Abstract

The closed-form analytic solutions for the breakdown voltage of 6H-SiC RTD, reachthrough diode, having the structure of p+-n-n+, are successfully derived by solving the impact ionization integral using effective ionization coefficient in the reachthrough condition. In the region of the lowly doped epitaxial layer, the breakdown voltages of 6H-SiC RTD nearly constant with the increased doping concentration. Also the breakdown voltages of 6H-SiC RTD decrease, in the region of the highly doped epitaxial layer, which coincides with Baliga'seq. [1].

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 512: Symposium F – Wide Bandgap Semiconductors for High Power, High Frequency , 1998 , 143
Copyright
Copyright © Materials Research Society 1998

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References

REFERENCES

1. Baliga, B. J., Modem Power Devices, (Jone Wiley & Sons,Inc., 1987)Google Scholar
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4. Shenoy, Praveen M. and Baliga, B. Jayant, IEEE EDL, Vol.16, No.10, pp.454–455 (1995).Google Scholar
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