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Chemically Assisted Ion Beam Etching of Tungsten using ClF3

Published online by Cambridge University Press:  28 February 2011

Charles Garner
Charles Garner*
Affiliation:
Jet Propulsion Laboratory, California Institute of TechnologyPasadena, CA 91109
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Extract

A chemically assisted ion beam etching (CAIBE) technique is described which employs an ion beam from an electron bombardment ion source and a directed flux of ClF3 neutrals. This technique enables the etching of tungsten foils and films in excess of 40 μm thick with good anisotropy and pattern definition over areas 5 mm2, and with a high degree of selectivity. (100) tungsten foils etched with this process exhibit preferred orientation etching, while polycrystalline tungsten films exhibit high etch rates approximately 80% that of (100) orientation tungsten.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 75: Symposium B – Photon, Beam, and Plasma Stimulated Chemical Processes at Surfaces , 1986 , 509
Copyright
Copyright © Materials Research Society 1987

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References

1. Schattenburg, M. S., Plotnik, I., and Smith, H. I., J. Vac. Sci. Technol. B 3 (1) 272 (1985).Google Scholar
2. Tang, C. C., Hess, D. W., J. Electrochem. Soc. 131 (1), 115 (1984).Google Scholar
3. Randall, J. N. and Wolfe, J. C., Appl. Phys. Lett. 39 (9), 742 (1981).CrossRefGoogle Scholar
4. Kumar, R., Ladas, C., and Hudson, G., Solid State Technol. 19, 54 (1976).Google Scholar
5. Randall, J. N. and Wolfe, J. C., Appl. Phys. Lett. 41, 247 (1982).Google Scholar
6. Ephroth, L. M. and Bennett, R. S., Microcircuit Eng. 83, 389 (1983).Google Scholar
7. Efremow, N. N., Geis, M. W., Mounting, R. W., Lincoln, G. A., Randall, J. N., and Economore, N. P., J. Vac. Sci. Technol. B 4 (1), 337 (1986).Google Scholar
8. Chinn, J. D., Fernandez, A., Adesida, I., and Wolf, E. D., J. Vac. Sci. Technol. A 2 (2), 701 (1983).CrossRefGoogle Scholar
9. Winters, H. F. and Coburn, J. W., J. Vac. Sci. Technol. B 3 (1), 9 (1985).Google Scholar
10. Winters, H. F. and Coburn, J. W., J. Vac. Sci. Technol. A 3 (5), 1376 (1985).CrossRefGoogle Scholar
11. Winters, H. F., J. Vac. Sci. Technol. A 3 (3), 700 (1985).CrossRefGoogle Scholar
12. Aston, G., Kaufman, H. R. and Wilburn, P. S., AIAA Journal 16 (5), 516 (1978).Google Scholar