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Chemically Assisted Ion Beam Etching of SiGe

Published online by Cambridge University Press:  25 February 2011

O.J. Glembocki ,
S.M. Prokes  and
R.E. Stahlbush
O.J. Glembocki
Affiliation:
U.S. Naval Research Laboratory, Washington, DC 20375
S.M. Prokes
Affiliation:
U.S. Naval Research Laboratory, Washington, DC 20375
R.E. Stahlbush
Affiliation:
U.S. Naval Research Laboratory, Washington, DC 20375
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Abstract

Chemically assisted ion beam etching (CAIBE) of Si1−Gex films is reported. Ar+ ion sputtering in the presence of Cl2 background gas has been used to etch epitaxial films of Si1−xGex, with x ranging between 0 and 0.5. It is found that Si1−xGex, sputters more rapidly than Si, but less than Ge. The use of C12 gas enhances the sputter rates of SiGe as in the case of Si. Analysis of the etch rates indicates that the etch rate increase is due to an enhancement of the sputtering process, rather than a chemical effect.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 204: Symposium E – Chemical Perspectives of Microelectronic Materials II , 1990 , 369
Copyright
Copyright © Materials Research Society 1991

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References

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