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Chemical Vapor Deposited Teflon Amorphous Fluoropolymer as an Interlevel Dielectric Material for Low Power Integrated Circuits

Published online by Cambridge University Press:  15 February 2011

R. Sharangpani  and
R. Singh
R. Sharangpani
Affiliation:
Ciemson university, Department of Electrical and Computer Engineering, Ciemson, SC, 29634–0915
R. Singh
Affiliation:
Ciemson University, Department of Electrical and Computer Engineering and Material Science and Engineering Program, Ciemson, SC 29634–0915.
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Abstract

The development of materials with dielectric constant (K) less than SiO2 (K=3.9) is essential to meet the stringent speed, power dissipation and crosstalk requirements that are driving the low power integrated circuit (IC) paradigm. Both the low K dielectric and the processing methodology used for it should satisfy several important criteria before the technique can be accepted in future mainstream low power IC manufacturing. We had reported earlier a chemical vapor deposition (CVD) technique for the deposition of DuPont's Teflon amorphous fluoropolymer 1600 (bulk K=1.93) using the principle of direct liquid injection. The processing was carried out with and without an ultra violet (UV) light source in a computerized rapid isothermal processing (RIP) system.

Recently, we have extensively characterized the films and examined the suitability of our technique in light of some of the requirements of the future IC industry. Our results indicate that the processed films exceed several of the established dielectric performance standards outlined in recent roadmaps for sub 0.25 μm ICs. The film properties were improved when the UV source was used during processing. CVD processed films in general demonstrated significant improvements in terms of manufacturability, throughput, cost, and dielectric properties over the same films processed by alternate techniques.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 476: Symposium N – Low-Dielectric Constant Materials III , 1997 , 207
Copyright
Copyright © Materials Research Society 1997

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References

REFERENCES

[1] Singh, R., J. Appl. Phys., 63, R59–R114 (1988).Google Scholar
[2] Singh, R., Sharangpani, R., Cherukuri, K.C., Chen, Y., Dawson, D.M., Poole, K.F., Rohatgi, A., Narayanan, S. and Thakur, R.P.S., Mat. Res. Soc. Symp. Proc., 427, 181 (1996)Google Scholar
[3] Singh, R., Semiconductor International, 9, 28 (1986).Google Scholar
[4] Singh, R., Chou, P., Radpour, F., Nelson, A. J., and Ullal, H. S., J. Appl. Phys., 66, 2381 (1989).Google Scholar
[5] Singh, R., Sinha, S., Thakur, RPS, and Chou, P., Appl. phys. Lett., 58, 1217 (1991).Google Scholar
[6] Singh, R., in the Proceedings of the International Conference on Beam Processing of Advanced Materials, (The Minerals, Metals & Materials Society, Warrendale, PA 1993), p. 619.Google Scholar
[7] Wait, M. A., Mavoori, J., Singh, R., Harriss, J. E., Poole, K. F., Kolis, J. W., Thakur, R. P. S., and Ogale, A. A., Appl. phys. Lett., 64, 3234, (1994).Google Scholar
[8] Singh, R. and Thakur, R. P. S., The Electrochem. Soc. Interface, 4, 28 (1995).Google Scholar
[9] Singh, R., in the Handbook of Compound Semiconductors, edited by Holloway, P. and McGuire, G., (Noyes Publications, Park Ridge, N.J.), 442 (1995).Google Scholar
[10] Singer, P., Semiconductor International, 92 (June 1993).Google Scholar
[11] Ting, C. H. and Seidel, T.E., Mat. Res. Soc. Symp. Proc. 381, 3 (1995)Google Scholar
[12] Blanchet, G. B., App. Phys. Lett, 62, 479 (1993).Google Scholar
[13] Jason, T.C., Moore, J.A. and Lu, T.M., Appl. phys. Lett., 60, 1866 (1992).Google Scholar
[14] Chow, R., Spragge, M.K., Loomis, G.E., Rainer, F., Ward, R.L., Thomas, I.M., and Koz-lowski, M.R., Mat. Res. Soc. Symp. Proc., 328, 731 (1994)Google Scholar
[15] Chow, R., Loomis, G.E. and Ward, R.L., J. Vac Sci. Technol. A, 14, 63 (1996).Google Scholar
[16] Sharangpani, R. and Singh, R., “Chemical Vapor Deposition of Teflon AF’, Proc 2nd Int. Dielectrics for ULSI/VLSI Multilevel Interconnect Conf. (DUMIC), 1997.Google Scholar
[17] Sharangpani, R. and Singh, R., Rev. Sci. Instr., 68, 1564 (1997).Google Scholar
[18] Sharangpani, R., Singh, R., Drews, M. and Ivey, K., J. Electronic Materials, 26, 402 (1997).Google Scholar
[19] Schwartz, G. and Ting, C.H., in The 1994 VLSI/ULSI Multilevel Interconnection Technology Roadmap Summary, Wade, T.E., Editor, p. 86, VLSI Multilevel Interconnect Conference, (1994)Google Scholar
[20] Foggiato, J., in Ref. 19, p. 81.Google Scholar
[21] Thakur, R.P.S., Chhabra, N., and Ditali, A., Appl. phys. Lett., 64, 3428 (1995).Google Scholar
[22] Sharangpani, R. and Singh, R., J. Electrochemical Society (In review).Google Scholar
[23] Sharangpani, R. and Singh, R., IEEE Transactions on Electron Devices, 43, 1138, (1996).Google Scholar