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Chemical Bonding of Fluorine Atoms in Siof Alloys: Microscopic Mechanisms for Reductions in the Dielectric Constant Relative to SiO2

Published online by Cambridge University Press:  15 February 2011

G. Lucovsky  and
H. Yang
G. Lucovsky
Affiliation:
Departments of Physics, Chemistry, Materials Sciences and Engineering, and Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27965–8202
H. Yang
Affiliation:
Departments of Physics, Chemistry, Materials Sciences and Engineering, and Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27965–8202
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Abstract

Si-O-F alloys have static dielectric constants (εs) significantly lower than SiO2. Infrared absorption spectra provide the basis modeling the molecular structure of these alloys. Contributions of electronic and vibrational transitions to εs are discussed in terms of an empirical chemical bonding model. Ab initio calculations are then used to identify inductive effects of Si- F bonds on the properties of Si-O-Si groups that are back-bonded to the Si atom of the Si-F group. These calculations provide a theoretical framework for understanding how relatively low concentrations of F atoms produce the significant decreases in εs reported for Si-O-F alloys.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 443: Symposium H – Low-Dielectric Constant Materials II , 1996 , 111
Copyright
Copyright © Materials Research Society 1997

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References

1) Lim, S.W., Shimogaki, Y., Nakano, Y, Tada, K and Komiyama, H.: Ext. Abst. 1995 Int. Conf. Solid State Device and Materials (Business Center for Academic Societies Japan, Tokyo, 1995) p. 153.Google Scholar
2) Lim, S.W., Shimogaki, Y., Nakano, Y, Tada, K and Komiyama, H.: Jpn. J. Appl. Phys. 35 1468 (1996).Google Scholar
3) Abstracts of the 1996 Electrochemical Society Meeting, Los Angeles, CA., May 1996.Google Scholar
4) Hayasaka, N., Miyajima, H., Nakasaki, Y. and Katsumaa, R.: Ext. Abts. 1995 Int. Conf. Solid State Device and Materials (Business Center for Academic Societies Japan, Tokyo, 1995) p. 157.Google Scholar
5) Lucovsky, G.: Fudamentals Physics of Amorphous Semicondudctors, Ed. by Yonezawa, F. (Springer-Verlag, Berlin, 1980) p. 87.Google Scholar
6) Theil, J.A., Tsu, D.V., Kim, S.S. and Lucovsky, G.: J. Vac. Sci. Technol. A 8 (1990) 1374.Google Scholar
7) Bums, G.: Solid State Physics (Academic Press, New York, 1985).Google Scholar
8) Sanderson, R.T.: Chemical Bonds and Bond Energy (Academic Press, New York, 1971).Google Scholar
9) Yang, H., Lucovsky, G. and Whitten, J.L. (unpublished).Google Scholar
10) Huheey, J.E.: Inorganic Chemistry (Harper and Row, New York, 1978) Chap. 4.Google Scholar