Hostname: page-component-77c89778f8-5wvtr Total loading time: 0 Render date: 2024-07-22T01:00:29.591Z Has data issue: false hasContentIssue false
  • English
  • Français

Chemical and Electrical Mechanisms in Titanium, Platinum, and Hafnium Contacts to Alpha (6H) Silicon Carbide

Published online by Cambridge University Press:  22 February 2011

L. M. Porter ,
R. C. Glass ,
R. F. Davis ,
J. S. Bow ,
M. J. Kim  and
R. W. Carpenter
L. M. Porter
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695–7907.
R. C. Glass
Affiliation:
Department of Physics and Measurement Technology, Linkoping University, S-581 83 Linkoping, Sweden.
R. F. Davis
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695–7907.
J. S. Bow
Affiliation:
Center for Solid State Science, Arizona State University, Tempe, AZ 85287–1704.
M. J. Kim
Affiliation:
Center for Solid State Science, Arizona State University, Tempe, AZ 85287–1704.
R. W. Carpenter
Affiliation:
Center for Solid State Science, Arizona State University, Tempe, AZ 85287–1704.
Get access

Abstract

Thin films (2 Å - 1000 Å) of titanium, platinum, and hafnium were deposited via UHV electron beam evaporation at room temperature on n-type, (0001) alpha (6H)-SiC and compared in terms of interfacial chemistry, energy barriers to electrical conduction, and macroscopic electrical behavior. Current-voltage measurements have shown that these contacts are rectifying, all with ideality factors between 1.01 and 1.09. The lowest leakage currents (∼5 × 10−8 A/cm2 at -10 V) were determined for unannealed Pt contacts and for Hf contacts annealed at 700°C for 20 minutes. Current-voltage (I-V), capacitance-voltage (C-V), and x-ray photoelectron spectro-scopy (XPS) were among the techniques used to determine barrier heights, all of which were within a few tenths of an electron volt of 1.0 eV. The narrow range of calculated barrier heights along with the XPS valence spectrum of the chemically prepared SiC surface give evidence that the Fermi level is pinned at the semiconductor surface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 282: Symposium E – Chemical Perspectives of Microelectronic Materials III , 1992 , 471
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Pelletier, J., Gervais, D., and Pomot, C., J. Appl. 55 (1984) 994.Google Scholar
[2] Brillson, L.J., Phys. Rev. B, 18 (1978) 2431.Google Scholar
[3] Brillson, L.J., Surf. Sci. Rep., 2 (1982) 123.Google Scholar
[4] Spellman, L.M., Glass, R.C., Davis, R.F., Humphreys, T.P., Jeon, H., Nemanich, R.J., Chevacharoenkul, S., and Parikh, N.R., Mat. Res. Soc. Symp. Proc., 221 (1991) 99–104.Google Scholar
[5] See for example, Rhoderick, E.H. and Williams, R.H., Metal-Semiconductor Contacts. 2nd Ed. (Clarendon Press, Oxford, 1988);Google Scholar
Sze, S.M., Physics of Semiconductor Devices. 2nd Ed.(John Wiley & Sons, New York, 1981);Google Scholar
Henisch, H.K., Semiconductor Contacts (Clarendon Press, Oxford, 1984).Google Scholar
[6] Smith, K.L. and Black, K.M., J. Vac. Sci. Technol. A, 2 (1984) 744.Google Scholar
[7] Ramquist, L., Hamrin, K., Johansson, G., Fahlman, A., and Nordling, C., J. Phys. Chem. Solids, 30 (1965) 1835.Google Scholar
[8] Ihara, H., Kumashiro, Y., Itoh, A., and Maeda, K., Jap. J. Appl. Phys., 12 (1973) 1462.Google Scholar
[9] Bow, J.S., Kim, M.J., Carpenter, R.W., Porter, L.M., and Davis, R.F., Mat. Res. Soc. Symp. Proc. (1992), to be published.Google Scholar
[10] Papanicolaou, N.A., Christou, A., and Gipe, M.L., J. Appl. Phys. 65 (1989) 3526.Google Scholar
[11] Humphrey, G.L., J. Amer. Chem. Soc. 73 (1951) 2261.Google Scholar
[12] Backhaus-Ricoult, M., Acta-Scripta Met. Proc., 4 (1989) 79.Google Scholar
[13] Sambasivan, S. and Petusky, W.T., J. Mater. Res., 7 (1992) 1473.Google Scholar
[14] Bruckl, C.E., AFML Tech. Rep., AFML-TR-65–2, Pt. II, Vol. VII, Air Force Materials Laboratory, Wright Patterson Air Force Base, OH (1966).Google Scholar
[15] Senzaki, K. and Kumashiro, Y., Bull. Electrotech. Lab. Jpn. 41 (1977) 593.Google Scholar