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Chemical Analysis of Ternary Semiconductors by Critical Voltage Measurements

Published online by Cambridge University Press:  28 February 2011

Paul Spellward  and
David Cherns
Paul Spellward
Affiliation:
H.H.Wills Physics Laboratory, University of Bristol, Bristol BS8 1TL, U.K
David Cherns
Affiliation:
H.H.Wills Physics Laboratory, University of Bristol, Bristol BS8 1TL, U.K
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Abstract

Critical voltage phenemona seen in electron diffraction can be used to determine the local composition of ternary semiconductors to a few per cent. Applications to (CdHg)Te and (AlGa)As are reported. Composition sensitive images can be obtained in various ways; techniques are discussed and results are presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 138: Symposium Q – Characterization of the Structure and Chemistry of Defects in Materials , 1988 , 563
Copyright
Copyright © Materials Research Society 1989

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