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Charging effect of a nc-Si in a SiO2 layer observed by scanning probe microscopy

Published online by Cambridge University Press:  01 February 2011

J. M. Son ,
J. M. Kim ,
Y. Khang ,
E. H. Lee ,
S. I. Park ,
Y. S. Kim  and
C. J. Kang
J. M. Son
Affiliation:
Department of Physics, Myongji University, Yongin, Gyeonggi-do 449-728, Korea
J. M. Kim
Affiliation:
Department of Physics, Myongji University, Yongin, Gyeonggi-do 449-728, Korea
Y. Khang
Affiliation:
Devices Lab, Samsung Advanced Institute of Technology, Yongin, Gyeonggi-do 449-712, Korea
E. H. Lee
Affiliation:
Devices Lab, Samsung Advanced Institute of Technology, Yongin, Gyeonggi-do 449-712, Korea
S. I. Park
Affiliation:
PSIA corp. Induspia 5F, Sang-Daewon-Dong 517-13, Sungnam, Gyeonggi-do 462-120, Korea
Y. S. Kim
Affiliation:
Department of Physics, Myongji University, Yongin, Gyeonggi-do 449-728, Korea
C. J. Kang
Affiliation:
Department of Physics, Myongji University, Yongin, Gyeonggi-do 449-728, Korea email: cjkang@mju.ac.kr
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Abstract

Scanning probe microscopy (SPM) with a conducting tip has been used to electrically probe silicon nanocrystals (NCs) on an insulating substrate. NC samples were produced by aerosol techniques followed by a sharpening oxidation. The size of NCs is in the range of 10-50nm and deposited on a silicon substrate with a density of around 1011/cm2. Using a conducting tip, the charge was injected directly into the NCs, and the bias dependent images due to the trapped charges in the NCs were monitored. Charging effects affected by the size of NCs and injection direction were also estimated from the apparent height differences of the NCs with respect to the applied bias.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 862: Symposium A – Amorphous and Nanocrystalline Silicon Science and Technology–2005 , 2005 , A8.7
Copyright
Copyright © Materials Research Society 2005

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