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Charge Carrier Recombination in Doped a-Si:H Studied by Contactless Photoconductivity Measurements

Published online by Cambridge University Press:  26 February 2011

A. Werner  and
M. Kunst
A. Werner
Affiliation:
Hahn-Meitner-Institut, Bereich Strahlenchemie, D-1000 Berlin 39, Federal Republic of Germany
M. Kunst
Affiliation:
Hahn-Meitner-Institut, Bereich Strahlenchemie, D-1000 Berlin 39, Federal Republic of Germany
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Abstract

Transient photoconductivity measurements in a-Si:H at different n- and p-doping level point to decay kinetics which strongly depend on the doping level and excitation densities. In undoped a-Si:H excess charge carriers decay mainly by a transition between electrons and holes at their respective mobility edges. The generation of hole traps by n-doping quenches this decay channel and transitions between localized states in the bandgap play an important role in charge carrier kinetics. In p-doped material the availability of a large density of mobile holes and positively charged recombination centers increases the electron decay drastically.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 95: Symposium E – Amorphous Silicon Semiconductors--Pure and Hydrogenated , 1987 , 119
Copyright
Copyright © Materials Research Society 1987

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References

1. Tiedje, T., Semiconductors and Semimetals, Vol.21B, edited by Pankove, J. I. (Academic Press, London, 1984), p.207 Google Scholar
2. Hvam, J. and Brodsky, M., Phys. Rev. Lett. 46 371 (1981)Google Scholar
3. Street, R. A., Phys. Rev. B32, 3910 (1985)Google Scholar
4. Kunst, M. and Werner, A., J. Appl. Phys. 58, 2236 (1985)Google Scholar
5. Werner, A., Kunst, M., Beck, G., Christen, J., and Weimann, G., Phys. Rev. B34, 5918 (1986)Google Scholar
6. Werner, A., Kunst, M., and Könenkamp, R., Phys. Rev. B33, 8878 (1986)Google Scholar
7. Orenstein, J., Kastner, M. A., and Vaninov, V., Phil. Mag. B46, 23 (1982)Google Scholar
8. Street, R. A., Zesch, J., and Thompson, M. J., Appl. Phys. Lett. 43, 672 (1983)Google Scholar