Hostname: page-component-848d4c4894-hfldf Total loading time: 0 Render date: 2024-05-21T15:26:05.537Z Has data issue: false hasContentIssue false
  • English
  • Français

Characterization of the Thin Diamond-Like Carbon Films Deposited Using Rf Inductively Coupled Ch4- Plasma Source

Published online by Cambridge University Press:  10 February 2011

B. Druz ,
V.I. Polyakov ,
E. Ostan ,
A. Hayes ,
A.I. Rukovishnikov ,
N.M. Rossukanyi  and
A.V. Khomich
B. Druz
Affiliation:
Veeco Instruments Inc., Plainview, NY 11803, USA, bdruz@worldnet.att.net
V.I. Polyakov
Affiliation:
Institute of Radio Eng. #X0026; Electronics, RAS, 11 Mohovaya str., Moscow 103907, Russia, vipl97@ire216.msk.su,
E. Ostan
Affiliation:
Veeco Instruments Inc., Plainview, NY 11803, USA, bdruz@worldnet.att.net
A. Hayes
Affiliation:
Veeco Instruments Inc., Plainview, NY 11803, USA, bdruz@worldnet.att.net
A.I. Rukovishnikov
Affiliation:
Institute of Radio Eng. #X0026; Electronics, RAS, 11 Mohovaya str., Moscow 103907, Russia, vipl97@ire216.msk.su,
N.M. Rossukanyi
Affiliation:
Institute of Radio Eng. #X0026; Electronics, RAS, 11 Mohovaya str., Moscow 103907, Russia, vipl97@ire216.msk.su,
A.V. Khomich
Affiliation:
Institute of Radio Eng. #X0026; Electronics, RAS, 11 Mohovaya str., Moscow 103907, Russia, vipl97@ire216.msk.su,
Get access

Abstract

Diamond-like carbon (DLC) films with 4-400 nm thickness were deposited on silicon substrates using direct ion beam from an RF inductively coupled CH4 - plasma (ICP) source. The dependence of the film electrical and photoelectrical properties on methane flow were examined. Two kinds of trapping centers with different activation energies and capture cross-sections, and very low densities were discovered by the Q-DLTS method. The influence of thermal annealing in air at 100-450°C was investigated. The current leakage and defect concentration were reduced while electrical breakdown field and photoresponse were increased in annealed films. The results obtained have been used for optimization of the technology to prepare thin films with good protective, electrically insulating, and passivating properties.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 446: Amorphous and Crystalline Insulating Thin Films–1996 , 1996 , 413
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Aisenberg, S. and Chabot, R., J.Appl.Phys., 42, 2953 (1971).Google Scholar
2 King, F.K., IEEE Trans.Magn., 17, 1376 (1981).Google Scholar
3 Banks, B. and Rutledge, S., NASA Technical Memorandum 82873 (1982), B. Banks, NASA Technical Memorandum 102301 (1989).Google Scholar
4 Robertson, J., Prog. Solid State Chem., 21 (1991).Google Scholar
5 Angus, J.C., Wang, W., and Sunkara, M., Anna Rev. Mater. Sci., 21, 221 (1991).Google Scholar
6 Wang, L., Halada, G., Gambino, R., Hayes, A. and DiStefano, S., J. Appl. Phys., 79, 1 (1996).Google Scholar
7 Druz, B., DiStefano, S., Hayes, A., Ostan, E., Williams, K., Wang, L., ICMTF'96, Proceedings, San Diego, CA, 1996.Google Scholar
8 Lang, D.V., J.Appl. Phys. 45, 3023 (1974).Google Scholar
9 Nath, S., Wilson, J.I.B., Diamond and Related Materials, 5, 65 (1995).Google Scholar
10 Polyakov, V.I., Perov, P.I., Rukovishnikov, A.I., Ermakova, O.N., Aleksandrov, A.L., Ignatov, B.G., Mikroelektronika, 16,326 (1987).Google Scholar
11 Arora, B.M., Chakravarty, S., Subramanian, S., Polyakov, V.l., Ermakov, M.G., Ermakova, O.N., Perov., P.I., J. Appl. Phys., 73, 1802 (1993).Google Scholar
12 Polyakov, V.l., Rukovishnikov, A.I., Perov, P.I., Khomich, A.V., Sukhanov, A.A., Dorfman, B.F., Pypkin, B.N., Abraizov, M.G., Druz, B., Thin Solid Films (1996), to be published.Google Scholar
13 Mandel, T., Frischholz, M., Helbig, R., Hammerschmidt, A., Appl. Phys. Lett., 64, 3637 (1994).Google Scholar
14 Polyakov, V.I., Perov, P.I., Ermakova, O.N., Ermakov, M.G., Rukovishnikov, A.I., V.I. Sergeev, Sov. Phys. Semicond., 23, 76 (1989).Google Scholar