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Characterization of the Interface Between Metal Contacts and Epilayers of Doped Silicon Carbide

Published online by Cambridge University Press:  15 February 2011

M. A. George ,
D. J. Larkin ,
J. Petit ,
A. Burger ,
S. H. Morgan  and
W. E. Collins
M. A. George
Affiliation:
Department of Physics, Fisk University, Nashville, TN 37208
D. J. Larkin
Affiliation:
NASA Lewis Research Center, Cleveland, OH 44135
J. Petit
Affiliation:
Department of Physics, Fisk University, Nashville, TN 37208
A. Burger
Affiliation:
Department of Physics, Fisk University, Nashville, TN 37208
S. H. Morgan
Affiliation:
Department of Physics, Fisk University, Nashville, TN 37208
W. E. Collins
Affiliation:
Department of Physics, Fisk University, Nashville, TN 37208
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Abstract

Aluminum contacts on chemical vapor deposited (CVD) SiC films were studied to examine variations in the chemical, morphological and electrical properties of the samples. Nitrogen and aluminum doped substrates were prepared to give n-type and p-type SiC epilayers respectively. These preparations were examined by surface sensitive spectroscopies and by atomic force microscopy (AFM). Samples were studied both before and after the deposition of aluminum films to compare differences between SiC(p++)/metal and SiC(n++)/metal contact interfacial properties. Aluminum has generally been found to have good adherence to the n+ epilayer but do not form good ohmic contacts, while metal films deposited on p+ epilayers have had poor adherence but have been found to provide better ohmic character. AFM images revealed nanometer sized clusters, attributed to excess Si on the n+ epilayers, while no clusters were observed on the p+ epilayers. XPS studies of the as-prepared samples indicated that the n+ epilayers had higher concentrations of oxides which may enhance adhesion. The chemical composition and morphology is discussed and correlated to the electrical properties obtained for the various samples.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 405: Symposium K – Surface/Interface and Stress Effects in Electronic Materials Nanostructures , 1995 , 513
Copyright
Copyright © Materials Research Society 1996

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