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Characterization of the Electronic Properties of Wide Bandgap CuIn(SeS)2 Alloys

Published online by Cambridge University Press:  01 February 2011

Adam F. Halverson ,
Peter T. Erslev ,
JinWoo Lee ,
J. David Cohen  and
William N. Shafarman
Adam F. Halverson
Affiliation:
Department of Physics, University of Oregon, Eugene, OR 97403U.S.A
Peter T. Erslev
Affiliation:
Department of Physics, University of Oregon, Eugene, OR 97403U.S.A
JinWoo Lee
Affiliation:
Department of Physics, University of Oregon, Eugene, OR 97403U.S.A
J. David Cohen
Affiliation:
Department of Physics, University of Oregon, Eugene, OR 97403U.S.A
William N. Shafarman
Affiliation:
Institute of Energy Conversion, University of Delaware, Newark, DE 19716U.S.A.
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Abstract

The electronic properties of sulfur containing CIS chalcopyrite alloys have been characterized using junction capacitance methods. Two devices were examined; one containing CuIn(S,Se)2 alloy with a 1:2 S:Se ratio and a bandgap near 1.15eV, and the other an endpoint CuInS2 alloy with a bandgap slightly above 1.5eV. Drive-level capacitance profiling measurements indicated hole carrier densities of less than 1 x 1015 cm-3 and 1.5 x 1016 cm-3, respectively. Transient photocapacitance (TPC) sub-bandgap spectroscopic measurements revealed sharp bandtails plus a broad defect band within the bandgap of each alloy. The TPC spectra for the CuInS2 sample revealed a couple of unusual features, including a bandtail signal that reversed sign below 250K. This indicated poorer hole collection than electron collection in the low temperature regime. Comparing these results to TPC spectra obtained previously for Cu(InGa)Se2 alloys indicate some similarities but also some striking differences.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 865: Symposium F – Thin-Film Compound Semiconductor Photovoltaics , 2005 , F16.3
Copyright
Copyright © Materials Research Society 2005

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References

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