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Characterization of the blue emission of Tm/Er co-implanted GaN

Published online by Cambridge University Press:  01 February 2011

Iman Roqan ,
Carol Trager-Cowan ,
Ben Hourahine ,
Katharina Lorenz ,
Emilio Nogales ,
Kevin P O’Donnell ,
Robert W Martin ,
Eduardo Alves ,
S Ruffenach  and
Olivier Briot
Iman Roqan
Affiliation:
iman.roqan@strath.ac.uk, University of Strathclyde, Physics, John Anderson Building, 107 Rottenrow, Glasgow, N/A, G4 0NG, United Kingdom
Carol Trager-Cowan
Affiliation:
c.trager-cowan@strath.ac.uk
Ben Hourahine
Affiliation:
benjamin.hourahine@strath.ac.uk
Katharina Lorenz
Affiliation:
lorenz@itn.pt
Emilio Nogales
Affiliation:
emilio.nogales@strath.ac.uk
Kevin P O’Donnell
Affiliation:
k.p.odonnell@strath.ac.uk
Robert W Martin
Affiliation:
r.w.martin@strath.ac.uk
Eduardo Alves
Affiliation:
dont know@dontknow.com
S Ruffenach
Affiliation:
dontknow@dontkow.com
Olivier Briot
Affiliation:
dontknow@dontknow.com
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Abstract

Comparative studies have been carried out on the cathodoluminescence (CL) and photoluminescence (PL) properties of GaN implanted with Tm and GaN co-implanted with Tm and a low concentration of Er. Room temperature CL spectra were acquired in an electron probe microanalyser to investigate the rare earth emission. The room temperature CL intensity exhibits a strong dependence on the annealing temperature of the implanted samples. The results of CL temperature dependence are reported for blue emission (∼ 477 nm) which is due to intra 4f-shell electron transitions (1G4 → 3H6) associated with Tm3+ ions. The 477 nm blue CL emission is enhanced strongly as the annealing temperature increases up to 1200°C. Blue PL emission has also been observed from the sample annealed at 1200°C. To our knowledge, this is the first observation of blue PL emission from Tm implanted GaN samples. Intra-4f transitions from the 1D2 level (∼ 465 nm emission lines) of Tm3+ ions in GaN have been observed in GaN:Tm films at temperatures between 20–200 K. We will discuss the temperature dependent Tm3+ emission in both GaN:Tm,Er and GaN:Tm samples.

Keywords

nitrideion-implantationluminescence
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 892 , 2005 , 0892-FF23-13
Copyright
Copyright © Materials Research Society 2006

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References

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