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Characterization of the a-SN/CDTE(110) Interface by Angle-Resolved X-Ray Photoemission

Published online by Cambridge University Press:  26 February 2011

Tzer-Shen Lin ,
William J. Partin  and
Yip-Wah Chung
Tzer-Shen Lin
Affiliation:
Northwestern University, Dept. of Materials Science and Engineering Evanston, Illinois 60201
William J. Partin
Affiliation:
Northwestern University, Dept. of Materials Science and Engineering Evanston, Illinois 60201
Yip-Wah Chung
Affiliation:
Northwestern University, Dept. of Materials Science and Engineering Evanston, Illinois 60201
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Abstract

Stoichiometric and atomically clean CdTe(110) surfaces have been prepared by suitable chemical etching, followed by argon sputtering, and sample annealing in ultra-high vacuum. Cubic (α) -tin was grown on CdTe(110) by tin evaporation from a tungsten filament at a substrate temperature of 30 °C. Angle-resolved X-ray photoelectron spectroscopy (ARXPS) was used to determine the a-Sn growth mechanism and the composition profile of this semiconductor heterostructure nondestructively. From our analyses, we conclude that a-Sn grows on CdTe(110) at 30 °C by a layer by layer mechanism and forms an abrupt junction with CdTe(110).

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 77: Symposium D – Interfaces, Superlattices, and Thin Films , 1986 , 247
Copyright
Copyright © Materials Research Society 1987

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References

REFERENCE

1. Farrow, R.F.C., J. Vac. Sci. Technol. B, 1, 222 (1983).Google Scholar
2. Farrow, R.F.C. et al., J. Cryst. Growth, 54, 507 (1981).Google Scholar
3. Takatani, S. and Chung, Y.W., Phys. Rev. B, 31 (4), 2290 (1985).Google Scholar
4. Fraser, W.A. et al., Surface Science, 36, 661 (1973).Google Scholar
5. Iwasaki, H., Nishitani, R., and Nakamura, S., Jap. J. Appl. Phys., 17, 1519 (1978).CrossRefGoogle Scholar
6. Pijolat, M. and Hollinger, G., Surf. Sci., 105, 114 (1981).Google Scholar
7. Caceci, M.S. and Cacheris, W.P., Byte, May 1984, 340–362.Google Scholar
8. Henke, B.L., Phys. Rev., A6, 94 (1972).CrossRefGoogle Scholar
9. Penn, David R., Elect, J.. Spectros. & Rel. Phen., 9, 29 (1976).Google Scholar
10. Comstock, Inc., P. 0. Box 199, Oak ridge, Tenn 37830.Google Scholar
11. II-VI Corp., Saxonburg, Pa 16056.Google Scholar
12. Solzbach, U. and Richter, H.J., Surf. Sci. 97, 191 (1980).CrossRefGoogle Scholar
13. Fadley, C.S., Progres in Surface Science, 16, 275 (1984).CrossRefGoogle Scholar
14. Egelhoff, W.F. Jr, Phys. Rev. B, 30 (2), 1052 (1984).Google Scholar
15. Our simplex program was written in Pascal. On a standard IBM PC, it takes between 30 to 60 minutes for convergence.Google Scholar
16. Stair, K.A. and Chung, Y.W., Phys. Rev. B, 32 (6), 3904 (1985).Google Scholar