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Characterization of Tantalum Oxide Thin Film and its Electrodes for DRAM's Capacitor Application

Published online by Cambridge University Press:  21 February 2011

Jong-Wan Park ,
Seok-Ryong Jeon ,
Jae-Suk Lee  and
Jeong-Youb Lee
Jong-Wan Park
Affiliation:
Department of Metallurgical Engineering, Hanyang Uni v., Seoul, 133–791, KOREA
Seok-Ryong Jeon
Affiliation:
Department of Metallurgical Engineering, Hanyang Uni v., Seoul, 133–791, KOREA
Jae-Suk Lee
Affiliation:
Department of Metallurgical Engineering, Hanyang Uni v., Seoul, 133–791, KOREA
Jeong-Youb Lee
Affiliation:
Department of Metallurgical Engineering, Hanyang Uni v., Seoul, 133–791, KOREA
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Abstract

Thermal stability, microstructure and electrical property of molybdenum nitride film were studied for application of ULSI's DRAM capacitor electrode and copper diffusion barrier. Phase transformation from Mo to γ-Mo2N was observed at 20% N2/(Ar+N2) flow ratio and γ-Mo2N and Δ-MoN phases coexisted at 50% N2 flow ratio. γ-Mo2N film was found to crystallize at 400°C. Amorphous γ-Mo2N deposited at 300 °C remained stable upon 750 °C heat treatment. Breakdown strengths of Y -Mo2N/Ta2O&/Si MOS capacitor before and after 850 °C annealing were 2.4 MV/cm and 1.85 MV/cm at 1×10-6 A/cm2, respectively. After 850 °C annealing, dielectric constant of Ta2Os film decreased to 19.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 355: Symposium B1 – Evolution of Thin-Film and Surface Structure and Morphology , 1994 , 483
Copyright
Copyright © Materials Research Society 1995

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References

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