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Characterization of Sputter Deposited Al-Nitride And Al-Oxide by X-Ray Photoelectron Loss Spectroscopy

Published online by Cambridge University Press:  28 February 2011

Charlene J.G. Kubiak ,
Carolyn Rubin Aita ,
Ngoc C. Tran  and
Tery L. Barr
Charlene J.G. Kubiak
Affiliation:
Materials Department and the Laboratory for Surface StudiesUniversity of Wisconsin-Milwaukee, P. O. Box 784, Milwaukee, WI 53201
Carolyn Rubin Aita
Affiliation:
Materials Department and the Laboratory for Surface StudiesUniversity of Wisconsin-Milwaukee, P. O. Box 784, Milwaukee, WI 53201
Ngoc C. Tran
Affiliation:
Materials Science CenterUniversity of Wisconsin-Madison, Madison, WI 53706
Tery L. Barr
Affiliation:
Materials Department and the Laboratory for Surface StudiesUniversity of Wisconsin-Milwaukee, P. O. Box 784, Milwaukee, WI 53201
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Abstract

The results of an x-ray photoelectron loss spectroscopy (XPLS) study of several wide band gap aluminum compounds are presented here. XPLS is a new application of x-ray photoelectron spectroscopy involving the determination of the energy separation, ΔE, between a particular core photoelectron peak and its principal loss peak. The materials investigated here are sputter deposited thin film Al-nitride and oxide, and bulk single crystal α-alumina. It is not possible to distinguish between these materials on the basis of the chemical shift in the binding energy of the A12p and A12s photoelectrons (Siegbahn shift). The results show that XPLS can be used to distinguish between these materials. ΔE in Al-oxides and nitride differs by several eV and is independent of sample charging. Comparison with ΔE calculated using a free electron gas model is made and related to the plasmon nature of ΔE.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 60: Symposium L – Defect Properties and Processing of High-Technology Nonmetallic Materials , 1985 , 379
Copyright
Copyright © Materials Research Society 1986

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