Hostname: page-component-848d4c4894-8bljj Total loading time: 0 Render date: 2024-06-27T06:29:34.327Z Has data issue: false hasContentIssue false

Characterization of Slurry System and Suppression of Oxide Erosion in Aluminum CMP (Chemical-Mechanical Planarization)

Published online by Cambridge University Press:  10 February 2011

Lei Zhong
Affiliation:
IPEC, 4717 E. Hilton Ave., Phoenix, AZ8503, lzhong@ipec.com
Jerry Yang
Affiliation:
IPEC, 4717 E. Hilton Ave., Phoenix, AZ8503, lzhong@ipec.com
Karey Holland
Affiliation:
IPEC, 4717 E. Hilton Ave., Phoenix, AZ8503, lzhong@ipec.com
Joost Grillaert
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
Katia Devriend
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
Nancy Heylen
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
Marc Meuris
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
Get access

Abstract

In this work, we investigated the dependence of the removal rate upon the oxidizer (peroxide) addition into commercially available slurries for a variety of films such as aluminum, titanium, titanium nitride and oxide. We found that the barrier layer materials were extremely sensitive to the peroxide addition while the removal rate varied only slightly for aluminum and oxide. The selectivity to titanium and titanium nitride drops from as high as 1000 to almost close to 1 as the mixture ratio (peroxide : slurry) increases. We proposed that the barrier layer be used to protect the oxide from being over-exposed and suppress the erosion eventually. This can be easily realized by dividing the process into two steps with each step being run at a specific peroxide mixture ratio. The experimental result unambiguously proved, for the first time, the effectiveness of this approach.

Type
Research Article
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Cook, L.M., Non-Crystalline, J. Solids, 120, p. 152 (1990).Google Scholar
2. Renteln, P., UJLSI-X, (Mater. Res. Soc. Proc. 359, Pittsburgh, PA 1995), p. 153.Google Scholar
3. Elbel, N., Neureither, B., Muller, J., and Ebersberger, B., CMP-MIC, (1997), p75. Google Scholar
4. Elbel, N., Neureither, B., Ebersberger, B., and Lahnor, P., J. Electrochem. Soc. 145, p. 16 59 (1998).10.1149/1.1838533Google Scholar