Hostname: page-component-848d4c4894-nmvwc Total loading time: 0 Render date: 2024-06-28T15:44:15.312Z Has data issue: false hasContentIssue false
  • English
  • Français

Characterization of Silicon and Indium Redistribution in InxGa1−xAs/n+-GaAs(100) Heteroepitaxial Layers Fabricated Using Pulsed Laser Melting

Published online by Cambridge University Press:  21 February 2011

Y. Chang ,
T.W. Sigmon ,
A.F. Marshall  and
K.H. Weiner
Y. Chang
Affiliation:
Solid State Laboratory and Department of Electrical Engineering, Stanford University, Stanford, CA 94305
T.W. Sigmon
Affiliation:
Solid State Laboratory and Department of Electrical Engineering, Stanford University, Stanford, CA 94305
A.F. Marshall
Affiliation:
Center for Materials Research, Stanford University, Stanford, CA 94305
K.H. Weiner
Affiliation:
Lawerence Livermore National Laboratory, Livermore,CA 94550
Get access

Abstract

Heteroepitaxial InxGa1−xAs/GaAs structures have been formed by pulsed laser induced mixing of molecular beam deposited In films (˜200Å) on Si doped n+-GaAs (100) substrates. The Si dopant and deposited In are redistributed in a rapid melt-solidification process driven by a XeCl pulsed excimer laser. It is found, from high resolution cross-sectional transmission electron microscopy, that the epitaxial layers are crystalline and lattice matched to the substrate except for the misfit dislocations lying along the InxGa1−xAs/GaAs interface. These interfacial dislocations are used to identify the laser melted and unmelted regions. The dip and pile-up regions in the Si SIMS profiles are attributed to a segregation effect. Numerical simulation based on the liquid-solid interface velocity dependent segregation coefficient is used to investigate this effect and has approximated the trends in the measured characteristic In and Si profiles.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 187: Symposium J – Thin Film Structures and Phase Stability , 1990 , 119
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Abelson, J. R., Sigmon, T. W., Kim, K. B., and Weiner, K. H., Appl. Phys. Lett., 52, 230 (1988).Google Scholar
[2] Chang, Y., Chou, S. Y., Sigmon, T. W., Marshall, A. F., and Weiner, K. H., Appl. Phys. Lett., 56, will be published on May 7th, 1990.Google Scholar
[3] Fitzgerald, E. A. Jr., Ph.D. Thesis, Cornell University, 1988.Google Scholar
[4] Liliental-Weber, Z., Gronsky, R., Washburn, J., Newman, N., Spicer, W. E., and Weber, E. R., J. Vac. Sci. Technol. B, 4, 912 (1986).Google Scholar
[5] Landolt-Bornstein new series, H1/17d, 337 (1984).Google Scholar
[6] Landi, E., Carey, P. G., and Sigmon, T. W., IEEE Trans. Computer-Aided Design, 7, 205 (1988).Google Scholar
[7] Wood, R. F., Phys. Rev. B, 25, 2786 (1982).Google Scholar
[8] Weiner, K. H., Ph.D. Thesis, Stanford University, 1989.Google Scholar