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Characterization of Si Implantation and Annealing of InP by Raman Spectroscopy

Published online by Cambridge University Press:  21 February 2011

L. Artus ,
R. Cusco ,
J.M. Martin  and
G. Gonzalez-Diaz
L. Artus
Affiliation:
Inst. Jaime Aimera (C.S.I.C.), C.Martí Franqués s.n., 08028 Barcelona, Spain
R. Cusco
Affiliation:
Inst. Jaime Aimera (C.S.I.C.), C.Martí Franqués s.n., 08028 Barcelona, Spain
J.M. Martin
Affiliation:
Dept. Electricidad y Electrónica, Universidad Complutense de Madrid, 28040 Madrid, Spain
G. Gonzalez-Diaz
Affiliation:
Dept. Electricidad y Electrónica, Universidad Complutense de Madrid, 28040 Madrid, Spain
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Abstract

Raman scattering was used to assess the lattice damage caused by Si+ implantation in InP, as well as the lattice recovery achieved after rapid thermal annealing (RTA). Semi-insulating InP was implanted with Si+ with doses in the range of 1012 to 5xl014cm”2. Raman scattering measurements show a progressive intensity reduction of the characteristic first- and second-order InP Raman peaks and an enhancement of the disorder activated modes with increasing dose. The onset of amorphization was found to be at about 1014 cm”2. RTA of the implanted samples at 875 °C for 10s results in a very good recovery of the InP lattice even for the highest dose, as confirmed by Raman scattering measurements.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 354: Symposium A – Beam Solid Interactions for Materials Synthesis and Characterization , 1994 , 213
Copyright
Copyright © Materials Research Society 1995

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