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Characterization of Reactive Ion Etch Damage in GaAs by Triple Crystal X-Ray Diffraction

Published online by Cambridge University Press:  22 February 2011

Victor S. Wang ,
Richard J. Matyi  and
Karen J. Nordheden
Victor S. Wang
Affiliation:
Materials Science Program, University of Wisconsin, Madison, WI 53706
Richard J. Matyi
Affiliation:
Dept. of Materials Science and Engineering, University of Wisconsin, Madison, WI 53706
Karen J. Nordheden
Affiliation:
GE Electronics Laboratory, Syracuse, NY 13221
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Abstract

Triple crystal x-ray diffraction (TCXD) is a non-destructive structural characterization tool capable of the separation and direct observation of the dynamic (perfect crystal) and the kinematic (imperfect crystal) components of the total intensity diffracted by a crystal. Specifically, TCXD can be used to measure the magnitude of the diffuse scattering arising from defects in the crystal structure in the immediate vicinity of a reciprocal lattice point. In this study, the effects of BC13 reactive ion etching (RIE) on the near-surface region of GaAs were investigated by analyzing the changes in the diffuse scattering using both the symmetric 004 reflection as well as the highly asymmetric and more surface sensitive 113 reflection. While the results from the 004 reflections revealed little difference between the unetched and the BC13-etched samples, maps of the diffracted intensity around the 113 reflections showed an unexpected and reproducible decrease in the extent of the diffuse scattering in the transverse direction (perpendicular to the < 113 > direction) as the RIE bias voltage was increased. This decrease suggests that the degree of etch damage induced in the GaAs near-surface region is reduced with increasing bias voltage and ion energy. Additionally, the symmetry and orientation of the kinematic scattering was altered. Possible mechanisms for these results willbe discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 324: Symposium K – Diagnostic Techniques for Semiconductor Materials Processing , 1993 , 445
Copyright
Copyright © Materials Research Society 1994

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