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Characterization of Rapid Thermally Nitrided Titanium Films Contacting Silicided and Non-Silicided Junctions

Published online by Cambridge University Press:  25 February 2011

S. Chittipeddi ,
M. J. Kelly ,
C. M. Dziuba ,
R. B. Irwin ,
P. M. Kahora ,
V. C. Kaiman  and
W. T. Cochran
S. Chittipeddi
Affiliation:
AT&T Bell Labs AHentown, PA 18103.
M. J. Kelly
Affiliation:
AT&T Bell Labs AHentown, PA 18103.
C. M. Dziuba
Affiliation:
AT&T Bell Labs AHentown, PA 18103.
R. B. Irwin
Affiliation:
AT&T Bell Labs AHentown, PA 18103.
P. M. Kahora
Affiliation:
AT&T Bell Labs AHentown, PA 18103.
V. C. Kaiman
Affiliation:
AT&T Bell Labs AHentown, PA 18103.
W. T. Cochran
Affiliation:
AT&T Bell Labs AHentown, PA 18103.
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Abstract

In the present work we have studied rapid thermally nitrided titanium films which contact self-aligned silicided titanium disilicide (TiSi2-salicided) and non-silicided junctions. We correlate electrical contact resistance data to SIMS results.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 260: Symposium C – Advanced Metallization and Processing for Semiconductor Devices and Circuits , 1992 , 387
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

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