Hostname: page-component-7bb8b95d7b-l4ctd Total loading time: 0 Render date: 2024-09-13T10:16:45.823Z Has data issue: false hasContentIssue false
  • English
  • Français

Characterization of Photo-Cvd Silicon Oxide

Published online by Cambridge University Press:  26 February 2011

R. Padmanabhan ,
B. J. Miller  and
N. C. Saha
R. Padmanabhan
Affiliation:
Physical Electronics & Packaging Laboratory, Semiconductor Research and Development Laboratory, Motorola, Inc., Mail Drop B136, 5005 E. McDowell, Phoenix, Az. 85008.
B. J. Miller
Affiliation:
Physical Electronics & Packaging Laboratory, Semiconductor Research and Development Laboratory, Motorola, Inc., Mail Drop B136, 5005 E. McDowell, Phoenix, Az. 85008.
N. C. Saha
Affiliation:
Semiconductor Analytical Laboratory, Bipolar Technology Center, Motorola, Inc., Mail Drop A-112, 5005 E. McDowell, Phoenix, Az. 85008.
Get access

Abstract

A photochemical vapor deposition technique was used to deposit silicon oxide films. A range of film properties was produced through changes in the process conditions. Refractive index, indicative of film composition, varied from 1.5 to 2.0, corresponding to oxygen rich and silicon rich conditions, respectively. Etch rate in buffered HF was a strong function of the refractive index, with higher index of refraction yielding lower rates. Film stress was tensile and the magnitude of the stress was again related to the index of refraction. Other properties that were evaluated included pinhole density and adhesion to Si. All the properties were directly relatable to the basic film composition.

X-ray photo electron and Auger electron spectroscopy were used to characterize the composition of these films. The Si 2p photoelectron and the Si KLL Auger electron spectra were broad for higher refractive index films and upon deconvolution indicated the presence of different silicon containing species, the natures of which depended upon the actual index of refraction. For stoichiometric films, the predominant constituent was SiO2 and for non-stoichiometric films, varying amounts of Si2O, SiO, Si2O3 and SiO2 were all present.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 101: Symposium B – Laser and Particle-Beam Chemical Processing for Microelectronics , 1987 , 385
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Itoh, H., Hatanaka, M., Akasaka, Y. and Nakata, H., Ext. Abst. of the 16th Conf. on Solid State Devices and Materials, Kobe, Japan, 437 (1984).Google Scholar
2 Dickinson, R. G. and Mitchell, A. C. G., Proc. Nati. Acad. Sci., 12, 692 (1926).Google Scholar
3 Wurzbach, J. A. and Grunthaner, F. J., J. Electrochem. Soc, 130 (3), 691 (1983).Google Scholar
4 Wagner, C. D., Joshi, A., Gulbrandsen, L. and Deal, B. E., J. Vac. Sci. Technol., 2B (2), 107 (1984).Google Scholar
5 Padmanabhan, R. and Miller, B. J., J. Vac. Sci. Technol., 4A (3), 363 (1986).Google Scholar
6 Archer, R. J., J. Opt. Soc. Amer., 52, 970 (1962).Google Scholar
7 Adams, A. C. in VLSI Technology, edited by Sze, S. M. (McGraw-Hill Publishers, New York, 1977) p. 93.Google Scholar
8 Wagner, C. D., Davis, L. E., Zeiler, M. V., Taylor, J. A., Raymond, R. H. and Gale, L. H., Surface and Interface Analysis, 3, 211 (1981).Google Scholar
9 Padmanabhan, R., Miller, B. J. and Tarn, G., presented at the 1987 MRS Fall Meeting, Boston, Ma. (unpublished).Google Scholar