Hostname: page-component-84b7d79bbc-x5cpj Total loading time: 0 Render date: 2024-07-27T20:20:08.996Z Has data issue: false hasContentIssue false
  • English
  • Français

Characterization of MS, MiS, and Mos Contacts to Type IIB Diamond by Capacitance-Voltage and Current-Volt Age

Published online by Cambridge University Press:  21 February 2011

Henry A. Wynands ,
M. L. Hartsell  and
Bradley A. Fox
Henry A. Wynands
Affiliation:
Kobe Steel USA Inc., Electronic Materials Center, 79 TW Alexander Dr., P.O. Box 13608, Research Triangle Park, NC 27709, USA, ‥
M. L. Hartsell
Affiliation:
Kobe Steel USA Inc., Electronic Materials Center, 79 TW Alexander Dr., P.O. Box 13608, Research Triangle Park, NC 27709, USA, ‥
Bradley A. Fox
Affiliation:
Kobe Steel USA Inc., Electronic Materials Center, 79 TW Alexander Dr., P.O. Box 13608, Research Triangle Park, NC 27709, USA, ‥
Get access

Abstract

Three types of electrical contacts on natural type lib single crystal diamonds have been studied by current-voltage (IV) and capacitance-voltage (CV) measurements. Vertical structures were fabricated with the metal-diamond (MS), metal-undoped diamond-doped diamond (MiS), or metal-SiO2-doped diamond (MOS) contacts and ohmic contacts on the opposite face of the diamond. The MS contact was rectifying and both the MiS and MOS were blocking contacts. While very high leakage currents were measured on the MiS structure in forward bias (MO6times the reverse bias), an accumulation region was observed in the MiS CV data. The uncompensated acceptor concentration values calculated from the CV data were in good agreement for different structures fabricated on the same samples and with the secondary ion mass spectroscopy (SIMS) measurements of the bulk boron concentration. Extreme stretch out was observed in the CV of the MiS and MOS due to interface traps. The density of interface traps was estimated to be in the 1012 cm-2 eV-1 range for these structures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 339: Symposium D – Diamond, Silicon Carbide and Nitride Wide Bandgap Semiconductors , 1994 , 235
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Bell, M. D., and Leivo, W. J., Phys. Rev. 111, 1227 (1958).Google Scholar
2. Glover, G. H., Solid-State Electronics 16, 973 (1973).Google Scholar
3. Lightowlers, E. C., and Collins, A. T., J. Phys. D: Appl. Phys. 9, 951 (1976).Google Scholar
4. Mead, C. A., and McGill, T. C., Phys. Letts. 58A, 249 (1976).Google Scholar
5. Geis, M. W., Rathman, D. D., Ehrlich, D. J., Murphy, R. A., and Lindley, W. T., EDL-8, 341 (1987).Google Scholar
6. Hicks, M. C., Wronski, C. R., Grot, S. A., Gildenblat, G. S., Badzian, A. R., Badzian, T., and Messier, R., J. Appl. Phys. 65, 2139 (1989).Google Scholar
7. Gildenblat, G. S., Grot, S. A., and Badzian, A., Proc. IEEE 79, 647 (1991).Google Scholar
8. Tachibana, T., Williams, B. E., and Glass, J. T., Phys. Rev. B 42, 11972 (1992).Google Scholar
9. Shiomi, H., Nishibayashi, Y., and Fujimori, N., Jap. J. Appl. Phys. 29, L2163 (1990).Google Scholar
10. Fujimori, N., and Nishibayashi, Y., Diamond Rel. Mat. 1, 665 (1992).Google Scholar
11. Miyata, U.K., Dreifus, D., and Kobashi, K., Appl. Phys. Lett. 60, 480 (1992).Google Scholar
12. Miyata, K., and Dreifus, D., J. Appl. Phys. 73, 4448 (1993).Google Scholar
13. Miyata, K., Kobashi, K., and Dreifus, D. L., Diam. Rel. Mat. 2, 1107 (1993).Google Scholar
14. Geis, M., Gregory, J., and Pate, B., IEEE Trans. Electron Dev. 38, 619 (1991).Google Scholar
15. Grot, S. A., Gildenblat, G. S., and Badzian, A. R., IEEE EDL 13, 462 (1992).Google Scholar
16. Tessmer, A. J., Das, K., and Dreifus, D., Diam. Rel. Mat. 89 (1992).Google Scholar
17. Venkatesan, V., Das, K., von Windheim, J. A., and Geis, M. W., Appl. Phys. Lett. 63, 1065 (1993).Google Scholar
18. Venkatesan, V., Malta, D. M., Das, K., and Belu, A. M., J. Appl. Phys. 74, 1179 (1993).Google Scholar
19. Personal Communication: Charles Evans and Associates (1993).Google Scholar
20. Schroder, D. K., Semiconductor Material and Device Characterization (John Wiley and Sons, Inc., New York, 1990) Chap. 2.Google Scholar
21. Wynands, H. A., Malta, D. M., Fox, B. A., von Windheim, J. A., Fleurial, J. P., Irvine, D., and Vandersande, J., Phys. Rev. B 49, 5745 (1994).Google Scholar
22. Collins, A. T., and Lightowlers, E. C., in The Properties of Diamond, edited by Field, J.E., (Academic Press, London, 1979).Google Scholar
23. von Windheim, J. A., Venkatesan, V., Malta, D. M., and Das, K., J. Electron. Materials 22, 391 (1993).Google Scholar
24. Nicollian, E. H., and Brews, J. R., MOS Physics and Technology (John Wiley & Sons, New York, 1982) Section 8.Google Scholar