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Characterization of Mos Structures with Ultra-Thin Tunneling Oxynitride

Published online by Cambridge University Press:  15 February 2011

H. Fujioka ,
C. Wann ,
D. Park  and
C. Hu
H. Fujioka
Affiliation:
Department of Electrical Engineering and Computer Sciences, University of California at Berkeley, Berkeley, CA94720
C. Wann
Affiliation:
Department of Electrical Engineering and Computer Sciences, University of California at Berkeley, Berkeley, CA94720
D. Park
Affiliation:
Department of Electrical Engineering and Computer Sciences, University of California at Berkeley, Berkeley, CA94720
C. Hu
Affiliation:
Department of Electrical Engineering and Computer Sciences, University of California at Berkeley, Berkeley, CA94720
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Abstract

Characteristics of ultrathin silicon oxynitride (15–25Å) and its interface with Si have been investigated. Oxynitride films with thickness down to 15Å can be grown reproducibly in a conventional furnace. The leakage currents through these films can be well explained by the direct tunneling mechanism and can be fit by the same equation as that for pure oxide. This result indicates that incorporation of nitrogen atoms does not seriously affect the basic properties of the film and its interface such as the effective mass and the barrier height. A p-type poly gate MOS structure with 22Å oxynitride has also been fabricated successfully without boron penetration even using BF2+ ion implantation and a conventional furnace. Since the leakage current thorough oxynitride with this thickness is acceptable for circuit operation, thickness of the gate insulator in the dual poly-Si process can be scaled down at least to 22Å.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 405: Symposium K – Surface/Interface and Stress Effects in Electronic Materials Nanostructures , 1995 , 333
Copyright
Copyright © Materials Research Society 1996

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