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Characterization of Localized Density of States in Intrinsic a-Si and poly-Si Films by Transient Voltage Spectroscopy

Published online by Cambridge University Press:  15 February 2011

G. Kawachi ,
M. Ishii ,
T. Tanaka  and
N. Konishi
G. Kawachi
Affiliation:
Hitachi Research Laboratory, Hitachi Ltd., Hitachi, Ibaraki, Japan
M. Ishii
Affiliation:
Hitachi Research Laboratory, Hitachi Ltd., Hitachi, Ibaraki, Japan
T. Tanaka
Affiliation:
Hitachi Research Laboratory, Hitachi Ltd., Hitachi, Ibaraki, Japan
N. Konishi
Affiliation:
Hitachi Research Laboratory, Hitachi Ltd., Hitachi, Ibaraki, Japan
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Abstract

The localized density of states (LDOS) at interfaces between intrinsic silicon and silicon nitride (Si3N4 films are studied using transient voltage spectroscopy (TVS). In the TVS technique, the transient of the voltage across a MIS-diode after a trap filling voltage pulse is measured using a high-impedance voltage probe. This allows us to make a precise measurement of the LDOS at undoped Si/insulator interfaces. The LDOS in a-Si:H/Si3N4systems has a broad peak around the energy of 0.9 eV below the conduction-band edge. A modification of the LDOS at a-Si:H/Si3N4 interfaces by bias-annealing is clearly observed using this technique. The results are consistent with the defect pool model. The LDOS in laser annealed poly-Si/Si3N4 systems has a peak centered 0.6eV below the conduction-band edge, which seems to be the Si dangling bond states in the poly-Si films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 377: Symposium A – Amorphous Silicon Technology 1995 , 1995 , 215
Copyright
Copyright © Materials Research Society 1995

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References

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