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Characterization of Local Electrical Property of Coincidence Site Lattice Boundary in Location-controlled Silicon Islands by Scanning Probe Microscopy

Published online by Cambridge University Press:  01 February 2011

Nobuyuki Matsuki ,
R. Ishihara ,
A. Baiano ,
Y. Hiroshima ,
S. Inoue  and
C.I.M. Beenakker
Nobuyuki Matsuki
Affiliation:
n.matsuki@tudelft.nl, Delft Institute of Technology, Delft Institute of Microsystems and Nanoelectronics, Feldmannweg 17, Delft, 2628 CT, Netherlands, +31 27 86294, +31 26 22163
R. Ishihara
Affiliation:
r.ishihara@tudelft.nl, Delft University of Technology, Delft Institute of Microsystems and Nanoelectronics, Feldmannweg 17, Delft, 2628 CT, Netherlands
A. Baiano
Affiliation:
a.baiano@ewi.tudelft.nl, Delft University of Technology, Delft Institute of Microsystems and Nanoelectronics, Feldmannweg 17, Delft, 2628 CT, Netherlands
Y. Hiroshima
Affiliation:
Hiroshima.Yasushi@exc.epson.co.jp, SEIKO EPSON Corporation, Frontier Device Research Center, 281 Fujimi, Fujimi-machi, Suwa-gun,, Nagano, 399-0293, Japan
S. Inoue
Affiliation:
inoue.satoshi@exc.epson.co.jp, SEIKO EPSON Corporation, Frontier Device Research Center, 281 Fujimi, Fujimi-machi, Suwa-gun,, Nagano, 399-0293, Japan
C.I.M. Beenakker
Affiliation:
neenakker@dimes.tudelft.nl, Delft University of Technology, Delft Institute of Microsystems and Nanoelectronics, Feldmannweg 17, Delft, 2628 CT, Netherlands
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Abstract

Local electrical property of coincidence site lattice boundaries (CSLBs) in location-controlled silicon islands, which are fabricated using micro-Czochralski process (grain filter), was characterized by scanning spreading resistance microscopy (SSRM) and scanning spreading resistance microscopy (SCM). Some CSLBs found in a silicon island are analyzed as Sigma 3 and Sigma 9 by electron back scattering diffraction pattern. These CSLBs are determined as {111}Sigma 3 and {221}Sigma 9 by referring to previous observation results made by transmission electron microscopy. {111}Sigma3 CSLBs shows no activity for SCM or SSRM; this is consistent with previous prediction that {111}Sigma 3 CSLB is not electrical active. We verified a capability of SCM and SSRM for characterizing local electrical property of coincidence site lattice boundary in silicon.

Keywords

laser annealingscanning probe microscopy (SPM)grain boundaries
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1025: Symposium B – Nanoscale Phenomena in Functional Materials by Scanning Probe Microscopy , 2007 , 1025-B16-16
Copyright
Copyright © Materials Research Society 2008

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