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Characterization of LiInS2 and LiInSe2 single crystals for nonlinear optical applications

Published online by Cambridge University Press:  21 March 2011

Ludmila Isaenko ,
Alexander Yelisseyev ,
Sergei Lobanov ,
Alexander Panich ,
Vitaly Vedenyapin ,
Julia Smirnova ,
Valentin Petrov ,
Jean-Jacques Zondy  and
Guido Knippels
Ludmila Isaenko
Affiliation:
Design & Technological Institute for Monocrystals SB RAS, Novosibirsk 630058 Russia
Alexander Yelisseyev
Affiliation:
Design & Technological Institute for Monocrystals SB RAS, Novosibirsk 630058 Russia
Sergei Lobanov
Affiliation:
Design & Technological Institute for Monocrystals SB RAS, Novosibirsk 630058 Russia
Alexander Panich
Affiliation:
Ben-Gurion University of the Negev, Dept of Physics, P.O.Box 653, 84105 Beer Sheva, Israel
Vitaly Vedenyapin
Affiliation:
Design & Technological Institute for Monocrystals SB RAS, Novosibirsk 630058 Russia
Julia Smirnova
Affiliation:
Design & Technological Institute for Monocrystals SB RAS, Novosibirsk 630058 Russia
Valentin Petrov
Affiliation:
MB-Institute for Nonlinear Optics and Ultrafast Spectroscopy, D-12489, Berlin, Germany
Jean-Jacques Zondy
Affiliation:
Laboratoire Observatoire de Paris, 61 Avenue de I'Observatoire, F 75014, Paris, France
Guido Knippels
Affiliation:
FOM-Institute for Plasma Physics, Edisonbaan 14, 3439 MN, Nieuwegeln, the Netherlands
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Abstract

X-ray structural analysis, nuclear magnetic resonance, optical spectroscopy and second harmonic generation were used to characterize the new nonlinear crystals LiInS2 and LiInSe2 which possess maximum band gap (3.59 and 2.86 eV at 300 K, respectively) among ternary chalcogenides. As grown crystals are only slightly colored while color change after annealing is due to native point defects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 692: Symposium H – Progress in Semiconductor Materials for Optoelectronic Applications , 2001 , H9.7.1
Copyright
Copyright © Materials Research Society 2002

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References

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