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Characterization of high-quality epitaxial AlN films grown by MOVPE

Published online by Cambridge University Press:  21 March 2011

Tomohiko Shibata ,
Keiichiro Asai ,
Teruyo Nagai ,
Shigeaki Sumiya ,
Mitsuhiro Tanaka ,
Osamu Oda ,
Hideto Miyake  and
Kazumasa Hiramatsu
Tomohiko Shibata
Affiliation:
NGK INSULATORS, LTD., 2-56 Suda-cho, Mizuho, Nagoya 467-8530, Japan Department of Electrical and Electronic Engineering, Faculty of Engineering, Mie University, 1515 Kamihama, Tsu, Mie 514-8507, Japan
Keiichiro Asai
Affiliation:
NGK INSULATORS, LTD., 2-56 Suda-cho, Mizuho, Nagoya 467-8530, Japan
Teruyo Nagai
Affiliation:
NGK INSULATORS, LTD., 2-56 Suda-cho, Mizuho, Nagoya 467-8530, Japan
Shigeaki Sumiya
Affiliation:
NGK INSULATORS, LTD., 2-56 Suda-cho, Mizuho, Nagoya 467-8530, Japan
Mitsuhiro Tanaka
Affiliation:
NGK INSULATORS, LTD., 2-56 Suda-cho, Mizuho, Nagoya 467-8530, Japan
Osamu Oda
Affiliation:
NGK INSULATORS, LTD., 2-56 Suda-cho, Mizuho, Nagoya 467-8530, Japan
Hideto Miyake
Affiliation:
Department of Electrical and Electronic Engineering, Faculty of Engineering, Mie University, 1515 Kamihama, Tsu, Mie 514-8507, Japan
Kazumasa Hiramatsu
Affiliation:
Department of Electrical and Electronic Engineering, Faculty of Engineering, Mie University, 1515 Kamihama, Tsu, Mie 514-8507, Japan
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Abstract

This paper presents the correlation between overall crystal mosaicities and dislocation behaviors of high-quality AlN epitaxial films grown on a C-plane sapphire substrate using a low-pressure metal organic vapor phase epitaxy (LP-MOVPE) method. Typical full width at half maximum (FWHM) values of x-ray rocking curves (XRC) for (0002) and (10-10) of the AlN are 80arcsec and 1800arcsec, respectively. From transmission electron microscopy (TEM) observations, edge-type dislocations thread the AlN layer, however, almost all screw-type dislocations disappear at an early AlN growth stage. The dislocation density of the AlN films in its surface region is as low as approximately 1x1010 cm-2. The distribution of the dislocations is considered to be caused by a large twisted mosaicity and a very small tilted mosaicity.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 693 , 2001 , I9.3.1
Copyright
Copyright © Materials Research Society 2002

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