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Characterization of Grain Boundaries and Interfaces by High Resolution Transmission Electron Microscopy

Published online by Cambridge University Press:  22 February 2011

William Krakow
William Krakow*
Affiliation:
IBM Corporation, T.J. Watson Research Center, P.O.Box 218, Yorktown Heights, NY 10598
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Abstract

Several examples will be given of high resolution electron microscope images of both grain boundaries and interfaces and the methods which have been applied to understanding their atomic structure. Specific expitaxial interfacial structures considered are: Pd2Si/Si used for ohmic contacts, Al on Si overlayers and CaF2/Si where the CaF2, is an attractive possibility as a dielectric material. For the case of grain boundaries specific examples of both twist and tilt boundaries in Au will be given to show the imaging capability with the new generation of medium voltage electron microscopes.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 153: Symposium J – Interfaces Between Polymers, Metals, and Ceramics , 1989 , 103
Copyright
Copyright © Materials Research Society 1989

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