Hostname: page-component-76fb5796d-vfjqv Total loading time: 0 Render date: 2024-04-26T18:39:44.239Z Has data issue: false hasContentIssue false
  • English
  • Français

Characterization of Doped GexSi1−x Multiple Quantum well Structures for far- IR Detectors

Published online by Cambridge University Press:  15 February 2011

D. W. Greve ,
R. Misra ,
R. Strong  and
T.E. Schlesinger
D. W. Greve
Affiliation:
Department of Electrical and Computer Engineering Carnegie Mellon University, Pittsburgh, PA 15213 USA
R. Misra
Affiliation:
Department of Electrical and Computer Engineering Carnegie Mellon University, Pittsburgh, PA 15213 USA
R. Strong
Affiliation:
Department of Electrical and Computer Engineering Carnegie Mellon University, Pittsburgh, PA 15213 USA
T.E. Schlesinger
Affiliation:
Department of Electrical and Computer Engineering Carnegie Mellon University, Pittsburgh, PA 15213 USA
Get access

Abstract

Doped GexSi1−x/Si multiple quantum well structures have been grown by UHV/CVD and characterized by various techniques. SIMS and X- ray confirm the intended modulation of germanium and boron concentrations, and photoluminescence has been used to assess material quality. Strong free- carrier absorption has been observed at normal incidence in some samples. The results suggest that doping intermediate between 4 × 1018 cm−3 and 4 × 1019 cm−3 is necessary for useful detectors.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 299: Symposium C2 – Infrared Detectors--Materials, Processing, and Devices , 1994 , 267
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Karunasiri, R. P. G., Park, J. S., Mii, Y. J., and Wang, K. L., Appl. Phys. Lett. 57, 2585 (1990)Google Scholar
2. Karunasiri, R. P. G., Park, J. S., and Wang, K. L.,Appl. Phys. Lett. 59, 2588 (1991).Google Scholar
3. Park, J. S., Karunasiri, R. P. G., and Wang, K. L.,Appl. Phys. Lett. 60, 103, (1992).Google Scholar
4. Park, J. S., Karunasiri, R. P. G., and Wang, K. L.,Appl. Phys. Lett. 61, 681 (1992).Google Scholar
5. People, R., Bean, J. C., Bethea, C. G., Sputz, S. K., and Peticolas, L. J., Appl. Phys. Lett. 61, 1122 (1992).Google Scholar
6. Greve, D. W. and Racanelli, M.,J. Vac. Sci. Tech. B 8, 511 (1990).Google Scholar
7. Greve, D. W., Misra, R., Schlesinger, T. E., and McLaughlin, G., Thin Solid Films 222, 46 (1992).Google Scholar
8. Misra, R., Strong, R., Greve, D. W., and Schlesinger, T. E., (to be published in J, Vac. Sci. Technol).Google Scholar
9. Misra, R., Greve, D. W., and Schlesinger, T. E., (to be published in J. Electron. Mater.).Google Scholar
10. Davies, G., Phys. Rep. 176, 85 (1989).Google Scholar
11. Omar, M. A., Elementary Solid State Physics, p. 297 (Addison Wesley, 1975).Google Scholar