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Characterization of Dislocations and Interfaces in Semiconductors by High Resolution Electron Microscopy

Published online by Cambridge University Press:  15 February 2011

J.C.H. Spence  and
A. Olsen
J.C.H. Spence
Affiliation:
Dept. of Physics, Arizona State University, Tempe, AZ 85281
A. Olsen
Affiliation:
Dept. of Physics, Arizona State University, Tempe, AZ 85281
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Abstract

It is not presently possible to resolve the individual atoms in any semiconductor by high resolution electron microscopy (HREM). However symmetry arguments may be used to allow near-atomic resolution lattice images to be interpreted in rare favorable cases. This method is applied to the problem of distinguishing shuffle and glide set partial dislocations in silicon. It is also proposed that two dimensional characteristic loss energy selected diffraction patterns be used to reveal the local symmetry about selected substitutional species implanted in semiconductor lattices.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 2: Symposium – Defects in Semiconductors I , 1980 , 279
Copyright
Copyright © Materials Research Society 1981

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References

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