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Characterization of bulk crystals of transition metal doped ZnO for spintronic applications

Published online by Cambridge University Press:  01 February 2011

M. H. Kane ,
R. Varatharajan ,
Z. C. Feng ,
S. Kandoor ,
J. Nause ,
C. Summers  and
I. T. Ferguson
M. H. Kane
Affiliation:
Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA
R. Varatharajan
Affiliation:
Cermet, Inc., Atlanta, GA
Z. C. Feng
Affiliation:
Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA
S. Kandoor
Affiliation:
Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA
J. Nause
Affiliation:
Cermet, Inc., Atlanta, GA
C. Summers
Affiliation:
Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA
I. T. Ferguson
Affiliation:
Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA
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Abstract

In this work, we report on the material properties of ZnO doped with Mn, Co, and Fe grown by a modified melt growth technique. X-ray diffraction measurements show that transition metals can be incorporated on Zn sites; an increase in the lattice parameter is apparent with increasing doping level. UV-visible transmission and reflectance measurements have also been performed. Absorption bands in the visible regime are distinctive to the individual transition metal dopants. A noticeable shift in the optical band edge has been observed from these Mn/Co/Fe-doped ZnO crystals in comparison with the undoped material. ZnO may also provide a suitable platform for the incorporation of transition metal elements through high temperature near equilibrium growth processes; however, further work is required in order to employ these materials for spintronic applications.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 799: Symposium Z – Progress in Compound Semiconductor Materials III - Electronic and Optoelectronic Applications , 2003 , Z8.6
Copyright
Copyright © Materials Research Society 2004

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References

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