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Characterization and Application of Laser Induced Seeded-Lateral Epitaxtal Si Layers on SiO2

Published online by Cambridge University Press:  15 February 2011

M. Miyao ,
M. Ohkura ,
T. Warabisako  and
T. Tokuyama
M. Miyao
Affiliation:
Central Research Laboratory, Hitachi Ltd., Kokubunji, Tokyo 185, Japan
M. Ohkura
Affiliation:
Central Research Laboratory, Hitachi Ltd., Kokubunji, Tokyo 185, Japan
T. Warabisako
Affiliation:
Central Research Laboratory, Hitachi Ltd., Kokubunji, Tokyo 185, Japan
T. Tokuyama
Affiliation:
Central Research Laboratory, Hitachi Ltd., Kokubunji, Tokyo 185, Japan
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Abstract

Electrical and crystal properties of seeded lateral epitaxial Si are evaluated as a function of distance from seeding area with the aid of a micro-probe RHEED and MOSFET fabrication. the results indicate that the quality of a grown layer is as good as that of bulk Si Crystal for most of the epitaxial layer. However, at the SiO2 edge, electrial properties are somewhat poor due to the existence of dislocation and residual stress.Element devices useful for SO structures are fabricated. Electrical properties of MOSPET's with double active areas indicate that surface and bottomregions of the epitaxial layer are all of device worthy quality.Insulated control gate bipolar type transistors are proposed and some preliminary results are shown.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 13 , 1982 , 499
Copyright
Copyright © Materials Research Society 1983

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References

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