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Characteristics of Ultra violet-Assisted Pulsed Laser Deposited Thin Oxide Films

Published online by Cambridge University Press:  10 February 2011

V. Craciun  and
R.K. Singh
V. Craciun
Affiliation:
Department of Materials Science & Engineering, University of Florida, Gainesville, FL 32611
R.K. Singh
Affiliation:
Department of Materials Science & Engineering, University of Florida, Gainesville, FL 32611
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Abstract

The properties of thin oxide films such as Y2O3, ZnO and Ba0.5Sr0.5TiO3 grown using an in situ ultraviolet (UV)-assisted pulsed laser deposition (UVPLD) technique have been studied. With respect to films grown by conventional PLD under similar conditions but without UV illumination, the UVPLD grown films exhibited better structural and optical and electrical properties, especially for lower substrate temperatures. They also exhibited a better stoichiometry and contained less physisorbed oxygen than the conventional PLD grown layers. These improvements can be traced to several factors. Firstly, deep UV photons and ozone ensure a better in situ cleaning of the substrate prior to the deposition. Secondly, the presence of more reactive gaseous species like ozone and atomic oxygen formed by photodissociation of molecular O2 promotes the growth of more oxygenated films. Thirdly, absorption of UV photons by adatoms could result in an increased of their surface mobility. All these factors have a beneficial effect upon crystalline growth, especially for moderate substrate temperatures. For optimised growth conditions, the crystalline quality and properties of ultraviolet-assisted pulsed laser deposited films was similar to that of films grown using conventional PLD at substrate temperatures of at least 200°C higher.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 623: Symposium U – Materials Science of Novel Oxide-Based Electronics , 2000 , 305
Copyright
Copyright © Materials Research Society 2000

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