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Characteristics of Sulfur in OMVPE Grown Indium Phosphide

Published online by Cambridge University Press:  25 February 2011

S.D. Tyagi ,
H. Ehsani  and
S.K. Ghandhi
S.D. Tyagi
Affiliation:
Electrical, Computer and Systems Engineering Department, Rensselaer Polytechnic Institute, Troy, New York 12180
H. Ehsani
Affiliation:
Electrical, Computer and Systems Engineering Department, Rensselaer Polytechnic Institute, Troy, New York 12180
S.K. Ghandhi
Affiliation:
Electrical, Computer and Systems Engineering Department, Rensselaer Polytechnic Institute, Troy, New York 12180
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Abstract

Doping of indium phosphide, grown by organometallic vapor phase epitaxy (OMVPE), has been carried out using hydrogen sulfide. For low partial pressures of H2S, the carrier concentration in the epitaxial layers is found to increase linearly. However, for higher partial pressures a region of superlinear doping is seen. For still higher partial pressures, a rapid decrease in carrier concentration is seen. In the linear region, the doping has a weak dependence on phosphine pressure, however, peak carrier concentration is higher for lower phosphine pressures.

The layers were studied using Hall Effect and Double Crystal X-Ray Diffraction, in order to elucidate the nature of impurities and compensating centers introduced. A model which explains the above characteristics is proposed for S incorporation in MOVPE grown InP.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 204: Symposium E – Chemical Perspectives of Microelectronic Materials II , 1990 , 201
Copyright
Copyright © Materials Research Society 1991

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References

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